IL202, IL203
www.vishay.com
Vishay Semiconductors
End of Life March-2018 - Alternative Device: CNY17
Rev. 1.6, 24-May-11
2
Document Number: 83613
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
R
6.0 V
Forward continuous current I
F
60 mA
Power dissipation P
diss
100 mW
Derate linearly from 25 °C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
70 V
Emitter collector breakdown voltage BV
ECO
7.0 V
Collector base breakdown voltage BV
CBO
70 V
Power dissipation P
diss
200 mW
Derate linearly from 25 °C 2.6 mW/°C
COUPLER
Isolation test voltage t = 1.0 s V
ISO
5300 V
RMS
Total package dissipation (LED and detector) P
tot
250 mW
Derate linearly from 25 °C 3.3 mW/°C
Creepage distance ≥ 7.0 mm
Clearance distance ≥ 7.0 mm
Storage temperature T
stg
-55 to +150 °C
Operating temperature T
amb
-55 to +100 °C
Lead soldering time ≤ 260 °C 10 s
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage
I
F
= 20 mA V
F
-1.21.5V
I
F
= 1.0 mA V
F
-1.01.2V
Breakdown voltage I
R
= 10 μA V
F
6.0 20 V
Reverse current V
R
= 6.0 V I
R
0.1 10 μA
OUTPUT
DC forward current gain V
CE
= 5.0 V, I
C
= 100 μA h
FE
100 200 -
Collector emitter breakdown voltage I
C
= 100 μA BV
CEO
70 - - V
Emitter collector breakdown voltage I
E
= 100 μA BV
ECO
7.0 10 - V
Collector base breakdown voltage I
C
= 10 μA BV
CBO
70 90 - V
Leakage current collector emitter V
CE
= 10 V, T
A
= 25 °C I
CEO
- 5.0 50 nA
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio (collector to base) I
F
= 10 mA, V
CB
= 10 V CTR
CB
15 - - %
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 2.0 mA V
CEsat
--0.4V
DC current transfer ratio
I
F
= 10 mA, V
CE
= 10 V
IL202 CTR
DC
125 200 250 %
IL203 CTR
DC
225 300 450 %
I
F
= 1.0 mA, V
CE
= 10 V
IL202 CTR
DC
30 - - %
IL203 CTR
DC
50 - - %
