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V20WM100C-M3/I

P1-P3P4-P5
V20WM100C-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
1
Document Number: 89978
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.53 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-252 (D-PAK)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 10 A
V
RRM
100 V
I
FSM
100 A
V
F
at I
F
= 10 A (T
A
= 125 °C) 0.64 V
T
J
max. 150 °C
Package TO-252 (D-PAK)
Diode variation Dual common cathode
TO-252 (D-PAK)
A
K
HEATSINK
A
V20WM100C
A
A
K
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20WM100C UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
20
A
per diode 10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
100 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V20WM100C-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
2
Document Number: 89978
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
(2)
Free air, without heatsink
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.58 -
V
I
F
= 10 A 0.72 0.82
I
F
= 5 A
T
A
= 125 °C
0.53 -
I
F
= 10 A 0.64 0.73
Reverse current per diode V
R
= 100 V
T
A
= 25 °C
I
R
(2)
- 800 μA
T
A
= 125 °C 4 24 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20WM100C UNIT
Typical thermal resistance
per diode
R
JC
2.0
°C/Wper device 1.0
per device R
JA
(1)(2)
65
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
V20WM100C-M3/I 0.38 I 2500/reel 13" diameter plastic tape and reel
0
2
4
6
8
10
12
14
16
18
20
22
24
0 25 50 75 100 125 150
Average Forward Rectied Current (A)
Case Temperature (°C)
Rth
JA
=Rth
JC
=1.0
o
C/W
Rth
JA
=65
o
C/W
0
1
2
3
4
5
6
7
8
9
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
V20WM100C-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
3
Document Number: 89978
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.0001
0.001
0.01
0.1
1
10
100
20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
A
= 150 °C
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
si
g
= 50 mV
p
-
p
0.1
1
10
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Case
P1-P3P4-P5

V20WM100C-M3/I

Mfr. #:
Buy V20WM100C-M3/I
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-V20PWM10C-M3/I
Lifecycle:
New from this manufacturer.
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