BCW60FNE6393HTSA1

P1-P3 P4-P6 P7-P9

BCW60, BCX70

1 Jan-29-2002

NPN Silicon AF Transistors

For AF input stages and driver applications

High current gain

Low collector-emitter saturation voltage

Low noise between 30 Hz and 15 kHz

Complementary types: BCW61, BCX71 (PNP)

1

2

3

VPS05161

Type Marking Pin Configuration Package

BCW60A

BCW60B

BCW60C

BCW60D

BCW60FF

BCW60FN

BCX70G

BCX70H

BCX70J

BCX70K

AAs

ABs

ACs

ADs

AFs

ANs

AGs

AHs

AJs

AKs

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

BCW60, BCX70

2 Jan-29-2002

Maximum Ratings

Parameter

Symbol

BCW60 BCW60FF BCX70

Unit

Collector-emitter voltage

V

CEO

32 32 45 V

Collector-base voltage

V

CBO

32 32 45

Emitter-base voltage

V

EBO

5 5 5

DC collector current

I

C

100 mA

Peak collector current

I

CM

200

Peak base current

I

BM

200

Total power dissipation, T

S

= 71 °C P

tot

330 mW

Junction temperature

T

j

150 °C

Storage temperature

T

st

g

-65 ... 150

Thermal Resistance

Junction - soldering point

1)

R

thJS

240 K/W

Electrical Characteristics at T

A

= 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 10 mA, I

B

= 0

BCW60/60FF

BCX70

V

(BR)CEO

32

45

-

-

-

-

V

Collector-base breakdown voltage

I

C

= 10 µA, I

B

= 0

BCW60/60FF

BCX70

V

(BR)CBO

32

45

-

-

-

-

Emitter-base breakdown voltage

I

E

= 1 µA, I

C

= 0

V

(BR)EBO

5 - -

1

For calculation of R

thJA

please refer to Application Note Thermal Resistance

BCW60, BCX70

3 Jan-29-2002

Electrical Characteristics at T

A

= 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

AC Characteristics

Collector cutoff current

V

CB

= 32 V, I

E

= 0

V

CB

= 45 V, I

E

= 0

BCW60 /60FF

BCX70

I

CBO

-

-

-

-

20

20

nA

Collector cutoff current

V

CB

= 32 V, I

E

= 0 , T

A

= 150 °C

V

CB

= 45 V, I

E

= 0 , T

A

= 150 °C

BCW60 / 60FF

BCX70

I

CBO

-

-

-

-

20

20

µA

Emitter cutoff current

V

EB

= 4 V, I

C

= 0

I

EBO

- - 20 nA

DC current gain 1)

I

C

= 10 µA, V

CE

= 5 V

h

FE

-grp. A/ G

h

FE

-grp. B/ H

h

FE

-grp. C/ J/ FF

h

FE

-grp. D/ K/ FN

h

FE

20

20

40

100

140

200

300

460

-

-

-

-

-

DC current gain 1)

I

C

= 2 mA, V

CE

= 5 V

h

FE

-grp. A/ G

h

FE

-grp. B/ H

h

FE

-grp. C/ J/ FF

h

FE

-grp. D/ K/ FN

h

FE

120

180

250

380

170

250

350

500

220

310

460

630

DC current gain 1)

I

C

= 50 mA, V

CE

= 1 V

h

FE

-grp. A/ G

h

FE

-grp. B/ H

h

FE

-grp. C/ J/ FF

h

FE

-grp. D/ K/ FN

h

FE

50

70

90

100

-

-

-

-

-

-

-

-

1) Pulse test: t ≤=300µs, D = 2%

P1-P3 P4-P6 P7-P9

BCW60FNE6393HTSA1

Mfr. #:

Buy BCW60FNE6393HTSA1

Manufacturer:

Infineon Technologies

Description:

TRANSISTOR AF SOT23

Lifecycle:

New from this manufacturer.

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BCW60FNE6393HTSA1