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DG2735ADN-T1-GE4

P1-P3P4-P6P7-P9P10-P10
Vishay Siliconix
DG2735A
Document Number: 67590
S11-0412-Rev. A, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low Voltage, 0.6 , Dual SPDT Analog Switch
DESCRIPTION
The DG2735A is low voltage, low on-resistance, dual single-
pole/double-throw (SPDT) monolithic CMOS analog
switches designed for high performance switching of
analog signals. Combining low-power, high speed, low
on-resistance, and small package size, the DG2735A is ideal
for portable and battery power applications.
The DG2735A have an operation range from 1.65 V to 4.3 V
single supply. The DG2735A has two separate control pins
with for the separated two SPDT switched.
The DG2735A is guaranteed 1.65 V logic compatible,
allowing the easy interface with low voltage DSP or MCU
control logic and ideal for one cell Li-ion battery direct power.
The switch conducts signals within power rails equally well in
both directions when on, and blocks up to the power supply
level when off. Break-before-make is guaranteed.
The DG2735A is built on Vishay Siliconix's sub micron
CMOS low voltage process technology and provides greater
than 300 mA latch-up protection, as tested per JESD78.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product with
lead (Pb)-free device terminations. DG2735A is offered in a
miniQFN package. The miniQFN package has a nickel-
palladium-gold device termination and is represented by the
lead (Pb)-free “-E4” suffix. The nickel-palladium-gold device
terminations meet all JEDEC standards for reflow and MSL
ratings.
FEATURES
• Low voltage operation (1.65 V to 4.3 V)
• Low on-resistance - R
ON
: 0.6 at 2.7 V
• Fast switching: t
ON
= 64 ns at 2.7 V
t
OFF
= 42 ns at 2.7 V
• Latch-up current > 300 mA (JESD78)
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Reduced power consumption
• High accuracy
• Reduce board space
• TTL/1.65 V logic compatible
APPLICATIONS
• Cellular phones
• Speaker headset switching
• Audio and video signal routing
• PCMCIA cards
• Battery operated systems
• Portable media player handheld test instruments
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
GND
NC2
DG2735A
miniQFN-10L
6
7
2
1
V+
NO1
COM1
NC1
IN1
3
4
5
IN2
COM2
NO2
8
9
10
Pin 1: LONG LEAD
Device Marking: Hx for DG2735A
x = Date/Lot Traceability Code
(Top View)
Pin 1
Note: Pin 1 has long lead
Hx
www.vishay.com
2
Document Number: 67590
S11-0412-Rev. A, 21-Mar-11
Vishay Siliconix
DG2735A
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/C above 70 °C.
TRUTH TABLE
Logic NC NO
0ON OFF
1OFF ON
ORDERING INFORMATION
Temp. Range Package Part Number
- 40 °C to 85°C miniQFN10 DG2735ADN-T1-GE4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Reference to GND
V+ - 0.3 to 5.0
V
IN, COM, NC, NO
a
- 0.3 to (V+ + 0.3)
Current (Any terminal except NO, NC or COM) 30
mA
Continuous Current (NO, NC, or COM) ± 250
Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 500
Storage Temperature (D Suffix) - 65 to 150 °C
Power Dissipation (Packages)
b
miniQFN10
c
208 mW
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %,V
IN
= 0.4 V or 1.65 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Unit Min.
b
Typ.
c
Max.
b
Analog Switch
Analog Signal Range
d
V
ANALOG
r
DS(on)
Full 0 V+ V
On-Resistance R
DS(on)
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 0.5 V
Room 0.5 0.6
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 1.5 V
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 0.5 V
Full 0.6
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 1.5 V
V+ = 4.3 V, I
NO/NC
= 100 mA, V
COM
= 0.9 V
Room 0.4 0.5
V+ = 4.3 V, I
NO/NC
= 100 mA, V
COM
= 2.5 V
V+ = 4.3 V, I
NO/NC
= 100 mA, V
COM
= 0.9 V
Full 0.4
V+ = 4.3 V, I
NO/NC
= 100 mA, V
COM
= 2.5 V
R
ON
Match
d
R
ON
V+ = 2.7 V, I
NO/NC
= 100 mA,
V
COM
= 0.5 V, 1.5 V
Room 0.06 0.08
V+ = 4.3 V, I
NO/NC
= 100 mA,
V
COM
= 0.9 V, 2.5 V
R
ON
resistance flatness
d
R
ON
flatness
V+ = 2.7 V, I
NO/NC
= 100 mA,
V
COM
= 0.5 V, 1.5 V
Room 0.15
Switch Off Leakage
Current
I
NO/NC(off)
V+ = 4.3 V, V
NO/NC
= 0.3 V/4.0 V,
V
COM
= 4.0 V/0.3 V
Room - 10 10
nA
Full - 50 50
I
COM(off)
Room - 10 10
Full - 50 50
Channel-On Leakage
Current
I
COM(on)
V+ = 4.3 V, V
NO/NC
= V
COM
= 4.0 V/0.3 V
Room
Full
- 20 20
- 100 100
Digital Control
Input High Voltage V
INH
Full 1.65
V
Input Low Voltage V
INL
Full 0.4
Input Capacitance C
IN
Full 6 pF
Input Current I
INL
or I
INH
V
IN
= 0 or V+ Full - 1 1 µA
Document Number: 67590
S11-0412-Rev. A, 21-Mar-11
www.vishay.com
3
Vishay Siliconix
DG2735A
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Dynamic Characteristics
Break-Before-Make Time
e
t
BBM
V+ = 3.6 V, V
NO
, V
NC
= 1.5 V, R
L
= 50 ,
C
L
= 35 pF
Room 1 11
ns
Tu r n - On T im e
e
t
ON
Room 44 75
Full 80
Turn-Off Time
e
t
OFF
Room 26 55
Full 60
Off-Isolation
d
O
IRR
R
L
= 50 , C
L
= 5 pF, f = 100 kHz Room
- 70
dB
Crosstalk
d
X
TA LK
- 70
3dB bandwith
d
R
L
= 50 , C
L
= 5 pF Room 30 MHz
NO, NC Off Capacitance
d
C
NO(off)
V
IN
= 0 V, or V+, f = 1 MHz Room
52
pF
C
NC(off)
52
Channel On Capacitance
d
C
NO(on)
168
C
NC(on)
168
Power Supply
Power Supply Range V+ 1.65 4.3 V
Power Supply Current I+ V
IN
= 0 or V+ Full 1.0 µA
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %,V
IN
= 0.4 V or 1.65 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Unit Min.
b
Typ.
c
Max.
b
R
ON
vs. V
COM
and Single Supply Voltage
V
COM
- Analog Voltage (V)
(Ω) ecnatsiseR-nO -
R
NO
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
NO/NC
= 100 mA
T
A
= 25 °C
V+ = 1.65 V
V+ = 1.8 V
V+ = 3.6 V
V+ = 3.0 V
V+ = 2.0 V
V+ = 2.7 V
V+ = 3.3 V
V+ = 4.3 V
R
ON
vs. V
COM
and Single Supply Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
COM
- Analog Voltage (V)
(Ω) ecnatsiseR-nO -
R
NO
0 0.5 1 1.5 2 2.5 3
+ 25 °C
I
NC
= 100 mA
V+ = 2.7 V (NC)
- 40 °C
+ 85 °C
P1-P3P4-P6P7-P9P10-P10

DG2735ADN-T1-GE4

Mfr. #:
Buy DG2735ADN-T1-GE4
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs Low Volt Dual SPDT 0.6 OHM
Lifecycle:
New from this manufacturer.
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