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SSM3K2615R,LF

P1-P3P4-P6P7-P9
SSM3K2615R
1
MOSFETs Silicon N-Channel MOS
SSM3K2615R
SSM3K2615R
SSM3K2615R
SSM3K2615R
Start of commercial production
2014-10
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Load Switches
• Motor Drivers
2.
2.
2.
2. Features
Features
Features
Features
(1) AEC-Q101 Qualified (Note1).
(2) 3.3-V gate drive voltage.
(3) Low drain-source on-resistance
: R
DS(ON)
= 380 mΩ (typ.) (@V
GS
= 3.3 V, I
D
= 0.5 A)
R
DS(ON)
= 330 mΩ (typ.) (@V
GS
= 4.0 V, I
D
= 1.0 A)
R
DS(ON)
= 230 mΩ (typ.) (@V
GS
= 10 V, I
D
= 1.0 A)
Note1: For detail information, please contact to our sales.
3.
3.
3.
3. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
SOT-23F
1: Gate
2: Source
3: Drain
2015-01-30
Rev.2.0
SSM3K2615R
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Channel temperature
Single-pulse avalanche energy
Avalanche current
Storage temperature
(t = 10 s)
(Note 1)
(Note 1), (Note 2)
(Note 3)
(Note 3)
(Note 4)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
P
D
T
ch
E
AS
I
AR
T
stg
Rating
60
±20
2
6
1
2
150
52.9
2
-55 to 150
Unit
V
A
W
mJ
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width (PW) ≤ 10 µs, duty ≤ 1%
Note 3: Device mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm ,Cu pad: 645 mm
2
)
Note 4: V
DD
= 25 V, T
ch
= 25 (Initial state), L = 20 mH, R
G
= 25Ω, I
AR
= 2A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
Note: The channel-to-ambient thermal resistance, R
th(ch-a)
, and the drain power dissipation, P
D
, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2015-01-30
Rev.2.0
SSM3K2615R
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 2)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
|Y
fs
|
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
I
D
= 0.5 A, V
GS
= 3.3 V
I
D
= 1.0 A, V
GS
= 4.0 V
I
D
= 1.0 A, V
GS
= 10 V
V
DS
= 10 V, I
D
= 1.0 A
Min
60
0.8
1.0
Typ.
0.38
0.33
0.23
2.0
Max
±10
1
2.0
0.58
0.44
0.3
Unit
µA
V
V
Ω
S
Note 1: Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (1 mA for
this device). Then, for normal switching operation, V
GS(ON)
must be higher than V
th
, and V
GS(OFF)
must be
lower than V
th
. This relationship can be expressed as: V
GS(OFF)
< V
th
< V
GS(ON)
.
Take this into consideration when using the device.
Note 2: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Test Condition
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
≈ 30 V, I
D
= 1 A
V
GS
= 0 to 10 V, R
G
= 50 Ω
Min
Typ.
150
25
70
25
30
50
150
Max
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Q
g
Q
gs
Q
gd
Test Condition
V
DD
≈ 48 V, V
GS
= 10 V,
I
D
= 2.0 A
Min
Typ.
6.0
4.6
1.4
Max
Unit
nC
2015-01-30
Rev.2.0
P1-P3P4-P6P7-P9

SSM3K2615R,LF

Mfr. #:
Buy SSM3K2615R,LF
Manufacturer:
Toshiba
Description:
MOSFET Small-Signal MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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