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QW-BSC01
REV:A
Comchip Technology CO., LTD.
Features
- Rated to 1200V at 5 Amps
- Zero reverse recovery current
- Zero forward recovery voltage
- Temperature independent switching behaviour.
Company reserves the right to improve product design , functions and reliability without notice.
- High temperature operation.
- High frequency operation.
C
(3)
A
C
(2)(1)
Parameter
Unit
Maximum Ratings (at TA=25°C, unless otherwise noted)
Repetitive peak reverse voltage
DC bolcking voltage
Continuous forward current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Symbol
VRRM
VDC
IF
IFSM
PTOT
RθJC
TJ
1200
50
109.5
47
1.37
-55 ~ +175
V
V
A
A
W
°C/W
°C
Storage temperature range
TSTG
-55 ~ +175
°C
Limits
1200
Tj = 25°C
Tj = 135°C
Tj = 158°C
18
8.5
5
Repetitive peak forward surge cruuent
IFRM
25
A
Conditions
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
TC = 25°C
TC = 110°C
Junction to case
T = 25°Cj
T = 25°Cj
Circuit Diagram
Reverse Voltage: 1200 V
Forward Current: 5 A
RoHS Device
CDBDSC51200-G
Mechanical data
- Case: TO-252/D-PAK, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
Silicon Carbide Power Schottky Diode
0.024(0.60)
0.016(0.40)
0.098(2.50)
0.083(2.10)
0.090(2.29)
0.016(0.40)
0.024(0.60)
0.016(0.40)
Dimensions in inches and (millimeters)
D-PAK(TO-252)
0.244(6.20)
0.213(5.40)
0.126(3.20)
0.094(2.40)
0.171(4.34)
0.268(6.80)
0.248(6.30)
0.217(5.50)
0.201(5.10)
0.187(4.74)
0.039(1.00)
0.020(0.50)
1 2
4
3
Surge peak reverse voltage T = 25°Cj
VRSM
1200
V
