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FPN430

P1-P3P4-P4
PNP Low Saturation Transistor
FPN430
FPN430A
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
These devices are designed for high current gain and low
saturation voltage with collector currents up to 2.0 A continuous.
Sourced from Process PB.
Symbol Characteristic Max Units
FPN430 / FPN430A
P
D
Total Device Dissipation 1.0 W
R
θ
JC
Thermal Resistance, Junction to Case 50
°C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 125
°C/W
TO-226
C
B
E
1999 Fairchild Semiconductor Corporation
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 35 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 2.0 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
FPN430 / FPN430A
FPN430 / FPN430A
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
BV
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 10 mA, I
B
= 0 30 V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
35 V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 100
µ
A, I
C
= 0
5.0 V
I
CBO
Collector Cutoff Current V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 100
°
C
100
10
nA
µ
A
I
EBO
Emitter Cutoff Current V
EB
= 4.0 V, I
C
= 0 100 nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 2.0 V
430
430A
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
100
250
60
40
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
430
430A
I
C
= 2.0 A, I
B
= 200 mA
500
450
800
mV
mV
mV
V
BE(
sat
)
Base-Emitter Saturation Voltage I
C
= 1.0 A, I
B
= 100 mA 1.25 V
V
BE(
on
)
Base-Emitter Saturation Voltage I
C
= 1.0 A, V
CE
= 2.0 V 1.0 V
SMALL SIGNAL CHARACTERISTICS
C
obo
Output Capacitance V
CB
= 10 V, I
E
= 0, f = 1.0 MHz 25 pF
F
T
Transition Frequency I
C
= 100 mA, V
CE
= 5.0 V,
f = 100 MHz
100 MHz
PNP Low Saturation Transistor
(continued)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Input/Output Capacitance vs
Reverse Bias Voltage
0.1 0.5 1 10 20 50 100
0
20
40
60
80
100
120
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pf)
CE
V = 2.0V
ce
C
ibo
C
obo
f = 1.0MHz
Base-Emitter Saturation
Voltage vs Collector Current
0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT (A)
V -BASE-EMITTER SATURATION VOLTAGE(V)
C
BESAT
25 °C
- 40 °C
125 °C
β = 10
Base-Emitter On Voltage vs
Collector Current
0.0001 0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT (A)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
25 °C
- 40 °C
125 °C
V = 2.0V
ce
Collector-Emitter Saturation
Voltage vs Collector Current
0.01 0.1 1 10
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (A)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
CESAT
- 40°C
25°C
125°C
β = 10
Current Gain vs Collector Current
0.0001 0.001 0.01 0.1 1 10
0
100
200
300
400
500
600
I - COLLECTOR CURRENT (A)
H - CURRENT GAIN
C
FE
25°C
125°C
- 40°C
V = 2.0V
ce
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.2 5
0.5
0.7 5
1
TEMPE RATUR E ( C)
P - POWER DISSIPATION (W)
°
D
TO-226
FPN430 / FPN430A
PNP Low Saturation Transistor
(continued)
P1-P3P4-P4

FPN430

Mfr. #:
Buy FPN430
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 30V 2A TO-226
Lifecycle:
New from this manufacturer.
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