IRF7752TR

P1-P3 P4-P6 P7-P7

IRF7752

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0 4 8 12 16 20

0

2

4

6

8

10

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

I =

D

4.6A

V = 15V

DS

V = 24V

DS

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

1000

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T

T

= 150 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

1 10 100

0

200

400

600

800

1000

1200

1400

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C SHORTED

GS

iss

g

s

g

d , ds

rss

g

d

oss ds

g

d

C

iss

C

oss

C

rss

IRF7752

www.irf.com 5

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

Fig 10a. Switching Time Test Circuit

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

5.0

T , Case Temperature( C)

I , Drain Current (A)

°

C

D

0.1

1

10

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF7752

6 www.irf.com

Fig 12. Typical On-Resistance Vs.

Drain Current

Fig 11. Typical On-Resistance Vs.

Gate Voltage

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Q

G

Q

GS

Q

GD

V

G

Charge

10 V

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

V

GS,

Gate -to -Source Voltage (V)

0.000

0.020

0.040

0.060

0.080

R

DS(on)

, Drain-to -Source On Resistance (Ω

)

I

D

= 4.6A

0 5 10 15 20 25 30 35 40

I

D

, Drain Current ( A )

0.020

0.025

0.030

R

DS ( on )

, Drain-to-Source On Resistance (

Ω

)

VGS = 4.5V

VGS = 10V

P1-P3 P4-P6 P7-P7

IRF7752TR

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET 2N-CH 30V 4.6A 8-TSSOP

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet