APTM20AM10FTG Datasheet APTM20AM10FTG | P1-P3

APTM20AM10FTG

APTM20AM10F

T

G

–

Rev 3 July, 2006

www.microsemi.com 1

–

6

G1

Q1

VBUS

NTC2

OUT

S1

G2

S2

Q2

0/VBUS NT C1

S2

G2

NTC2

OUT

VBUS

NTC1

S1 S2

G2

0/VBUS

G1

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

S

ymbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 200 V

T

c

= 25°C 175

I

D

Continuous Drain Current

T

c

= 80°C 131

I

DM

Pulsed Drain current 700

A

V

GS

Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance 12

mΩ

P

D

Maximum Power Dissipation T

c

= 25°C 694 W

I

AR

Avalanche current (repetitive and non repetitive) 89 A

E

AR

Repetitive Avalanche Energy 50

E

AS

Single Pulse Avalanche Energy 2500

mJ

V

DSS

= 200V

R

DSon

= 10mΩ typ @ Tj = 25°C

I

D

= 175A @ Tc = 25°C

Applicatio

n

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

Features

• Power MOS 7

®

FREDFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate c harge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symmetrical design

- Lead frames for power connections

• Internal thermistor for temperature monitoring

• High level of integration

Benefits

• Outsta nding perfor mance at hi gh freq ue nc y operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Low profile

• RoHS Compliant

P

hase leg

MOSFET Power Module

APTM20AM10FTG

APTM20AM10F

T

G

–

Rev 3 July, 2006

www.microsemi.com 2

–

6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 200V T

j

= 25°C 200

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 160V T

j

= 125°C 1000

µA

R

DS(on)

Drain – Source on Resistance V

GS

= 10V, I

D

= 87.5A

10 12

mΩ

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 5mA 3 5 V

I

GS S

Gate – Source Leakage Current V

GS

= ±30 V, V

DS

= 0V ±150 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

is s

Input Capacitance 13.7

C

oss

Output Capacitance 4.36

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

f = 1MHz

0.19

nF

Q

g

Total gate Charge 224

Q

gs

Gate – Source Charge 86

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 100V

I

D

= 150A

94

nC

T

d(on)

Tur n-on Delay Ti me 28

T

r

Rise Time 56

T

d(off)

Turn-off Delay Time 81

T

f

Fall Time

Inductive switching @ 125°C

V

GS

= 15V

V

Bus

= 133V

I

D

= 150A

R

G

= 2.5Ω

99

ns

E

on

Turn-on Switching Energy 926

E

off

Turn-off Switching Energy

Inductive switching @ 25°C

V

GS

= 15V, V

Bus

= 133V

I

D

= 150A,

R

G

= 2.5Ω 910

µJ

E

on

Turn-on Switching Energy 1216

E

off

Turn-off Switching Energy

Inductive switching @ 125°C

V

GS

= 15V, V

Bus

= 133V

I

D

= 150A,

R

G

= 2.5Ω

1062

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C 175 I

S

Continuous Source current

(Body diode)

Tc = 80°C 131

A

V

SD

Diode Forward Voltage V

GS

= 0V, I

S

= - 150A 1.3 V

dv/dt Peak Diode Recovery X 8 V/ns

T

j

= 25°C 220

t

rr

Reverse Recovery Time

T

j

= 125°C 420

ns

T

j

= 25°C 2.14

Q

rr

Reverse Recovery Charge

I

S

= - 150A

V

R

= 133V

di

S

/dt = 200A/µs

T

j

= 125°C 5.8

µC

X dv/dt numbers reflect the limitations of the circuit rather than the device itself.

I

S

≤ - 150A di/dt ≤ 700A/µs V

R

≤ V

DSS

T

j

≤ 150°C

APTM20AM10FTG

APTM20AM10F

T

G

–

Rev 3 July, 2006

www.microsemi.com 3

–

6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

thJC

Junction to Case Thermal Resistance 0.18 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V

T

J

Operating junction temperature range

-40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To Heatsink M5 2.5 4.7 N.m

Wt Package Weight 160 g

Temperature sensor NTC

(see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

kΩ

B

25/85

T

25

= 298.15 K 3952

K

























−

=

TT

B

R

T

11

exp

25

85/25

25

SP4 Package outline (dimensions in mm)

ALL D IMENSIONS MARKED " * " ARE T OL ERENCED AS :

See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTM20AM10FTG

APTM20AM10FTG

Products related to this Datasheet