TC2054/2055/2186
DS21663D-page 4 © 2009 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
Thermal Regulation ΔV
OUT/
ΔP
D
—0.04 V/WNote 8
Thermal Shutdown Die
Temperature
T
SD
160 °C
Output Noise eN 600 nV /
Hz
I
L
= I
OUT
MAX
, F = 10 kHz
Response Time
(from Shutdown Mode)
t
R
—60µsV
IN
= 4V
C
IN
= 1 µF, C
OUT
= 10 µF
I
L
= 0.1 mA, Note 11
SHDN
Input
SHDN
Input High Threshold V
IH
60 %V
IN
V
IN
= 2.5V to 6.0V
SHDN
Input Low Threshold V
IL
——15%V
IN
V
IN
= 2.5V to 6.0V
ERROR
OUTPUT
Minimum V
IN
Operating
Voltage
V
INMIN
1.0 V I
OL
= 0.1 mA
Output Logic Low Voltage V
OL
400 mV 1 mA Flows to ERROR,
I
OL
= 1 mA, V
IN
= 2V
ERROR
Threshold Voltage V
TH
0.95 x V
R
V See Figure 4-2
ERROR
Positive Hysteresis V
HYS
—50mVNote 10
V
OUT
to ERROR Delay t
DELAY
—2msV
OUT
from V
R
= 3V to 2.8V
Resistance from ERROR
to
GND
R
ERROR
126 Ω V
DD
= 2.5V, V
OUT
= 2.5V
Electrical Specifications: Unless otherwise noted, V
DD
= +2.7V to +6.0V and V
SS
= GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges:
Extended Temperature Range T
A
-40 +125 °C
Operating Temperature Range T
A
-40 +125 °C
Storage Temperature Range T
A
-65 +150 °C
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23 θ
JA
255 °C/W
ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameter Sym Min Typ Max Units Conditions
Note 1: The minimum V
IN
has to meet two conditions: V
IN
= 2.7V and V
IN
= V
R
+ V
DROPOUT
.
2: V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3: TCV
OUT
=
4:
5:
6: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
7: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
8: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
MAX
at V
IN
= 6V for T = 10 ms.
9: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
, θ
JA
).
10: Hysteresis voltage is referenced by V
R
.
11: Time required for V
OUT
to reach 95% of V
R
(output voltage setting), after V
SHDN
is switched from 0 to V
IN
.
V
OUTMAX
V
OUTMIN
()10
6
×
V
OUT
ΔT×
-----------------------------------------------------------------------------------------
© 2009 Microchip Technology Inc. DS21663D-page 5
TC2054/2055/2186
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
OUT
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
FIGURE 2-1: Power Supply Rejection
Ratio.
FIGURE 2-2: Power Supply Rejection
Ratio.
FIGURE 2-3: Output Noise vs. Frequency.
FIGURE 2-4: Power Supply Rejection
Ratio.
FIGURE 2-5: Power Supply Rejection
Ratio.
FIGURE 2-6: Dropout Voltage vs. I
LOAD
.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
-100
-80
-60
-40
-20
0
10 100 1,000 10,000 100,000 1,000,000
f (Hz)
PSRR (dB)
V
INDC
= 4V
V
INAC
= 100 mV
p-p
V
OUTDC
= 3V
I
OUT
= 100 µA
C
OUT
= 1 µF Cerami
c
10 100 1000 10k 100k 1M
-100
-80
-60
-40
-20
0
10 100 1,000 10,000 100,000 1,000,000
f (Hz)
PSRR (dB)
10
100
1000
10k
1M
100k
V
INDC
= 4V
V
INAC
= 100 mV
p-p
V
OUTDC
= 3V
I
OUT
= 150 mA
C
OUT
= 1 µF Ceramic
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
Frequency (kHz)
Noise (µV/
Hz)
C
OUT
= 1 µF
-100
-80
-60
-40
-20
0
10 100 1,000 10,000 100,000 1,000,000
f (Hz)
PSRR (dB)
V
INDC
= 4V
V
INAC
= 100 mV
p-p
V
OUTDC
= 3V
I
OUT
= 150 mA
C
OUT
= 10 µF Ceramic
10 100 1000 10k 100k 1M
-100
-80
-60
-40
-20
0
10 100 1,000 10,000 100,000 1,000,000
f (Hz)
PSRR (dB)
10 100 1000 10k 100k 1M
V
INDC
= 4V
V
INAC
= 100 mV
p-p
V
OUTDC
= 3V
I
OUT
= 150 mA
C
OUT
= 10 µF Tantalum
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
0
50
100 150
T = 130°C
T = -45°C
T = 25°C
I
LOAD
(mA)
DOV (V)
V
OUT
= 1.8V
TC2054/2055/2186
DS21663D-page 6 © 2009 Microchip Technology Inc.
Note: Unless otherwise indicated, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
OUT
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
FIGURE 2-7: I
DD
vs. Temperature.
FIGURE 2-8: Output Voltage vs.
Temperature.
FIGURE 2-9: Output Voltage vs.
Temperature.
FIGURE 2-10: Output Voltage vs. Output
Current.
FIGURE 2-11: Output Voltage vs. Supply
Voltage.
FIGURE 2-12: Dropout Voltage vs. Supply
Voltage.
2.5
2.55
2.6
2.65
2.7
2.75
2.8
2.85
2.9
-50 -35 -20 -5 10 25 40 55 70 85 100 115 130 145
IOUT = 0.1mA
V
OUT = 2.8V
VIN = 6.5V
VIN = 3.8V
VIN = 6.0V
Temperature (˚C)
VOUT (V)
-50 -35 -20 -5 10 25 40 55 70 85 100 115 130 145
Tem
p
erature
(
˚C
)
VOUT (V)
VIN = 6.5V
VIN = 6.0V
VIN = 2.8V
IOUT = 0.1mA
V
OUT = 1.8V
1.9
1.86
1.84
1.82
1.8
1.78
1.76
1.74
1.72
1.88
1.7
1.7
1.72
1.74
1.76
1.78
1.8
1.82
1.84
1.86
1.88
1.9
0 15 30 45 60 75 90 105 120 135 15
0
VIN = 2.8V
ILOAD (mA)
VOUT (V)
3.5 4 4.5 5 5.5 6 6.5 7
Temp = +130˚C
Temp = -45˚C
Temp = +25˚C
2.5
2.55
2.6
2.7
2.75
2.8
2.85
2.9
2.65
I
OUT
= 0.1mA
V
OUT
= 2.8V
VOUT (V)
VIN (V)
2.7 3.2 3.7 4.2 4.7 5.2 5.7 6.2 6.7
VOUT (V)
VIN (V)
1.7
1.72
1.74
1.76
1.78
1.8
1.82
1.84
1.86
1.88
1.9
Temp = +130˚C
Temp = -45˚C
Temp = +25˚C
I
OUT
= 0.1mA
V
OUT
= 1.8V

TC2055-1.8VCTTR

Mfr. #:
Manufacturer:
Microchip Technology
Description:
LDO Voltage Regulators .1mA w/Shtdn & Error 1.8V
Lifecycle:
New from this manufacturer.
Delivery:
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