SQM50P06-15L_GE3 Datasheet SQM50P06-15L_GE3 | P1-P3

SQM50P06-15L

www.vishay.com

Vishay Siliconix

S12-1847-Rev. B, 30-Jul-12

1

Document Number: 67001

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

•TrenchFET

®

Power MOSFET

• Package with Low Thermal Resistance

•100 % R

g

and UIS Tested

• AEC-Q101 Qualified

d

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

V

DS

(V) - 60

R

DS(on)

() at V

GS

= - 10 V 0.015

R

DS(on)

() at V

GS

= - 4.5 V 0.022

I

D

(A) - 50

Configuration Single

S

G

D

P-Channel MOSFET

TO-263

SDG

Top View

ORDERING INFORMATION

Package TO-263

Lead (Pb)-free and Halogen-free SQM50P06-15L-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

- 60

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

T

C

= 25 °C

a

I

D

- 50

A

T

C

= 125 °C - 41

Continuous Source Current (Diode Conduction)

a

I

S

- 50

Pulsed Drain Current

b

I

DM

- 200

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

- 50

Single Pulse Avalanche Energy E

AS

125 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

150

W

T

C

= 125 °C 50

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

40

°C/W

Junction-to-Case (Drain) R

thJC

1

SQM50P06-15L

www.vishay.com

Vishay Siliconix

S12-1847-Rev. B, 30-Jul-12

2

Document Number: 67001

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.



SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= - 250 μA - 60 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= - 250 μA - 1.5 - - 2.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= - 60 V - - - 1

μA V

GS

= 0 V V

DS

= - 60 V, T

J

= 125 °C - - - 50

V

GS

= 0 V V

DS

= - 60 V, T

J

= 175 °C - - - 150

On-State Drain Current

a

I

D(on)

V

GS

= - 10 V V

DS

- 5 V - 50 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V I

D

= - 17 A - 0.013 0.015



V

GS

= - 10 V I

D

= - 17 A, T

J

= 125 °C - - 0.025

V

GS

= - 10 V I

D

= - 17 A, T

J

= 175 °C - - 0.030

V

GS

= - 4.5 V I

D

= - 14 A - 0.018 0.022

Forward Transconductance

a

g

fs

V

DS

= - 15 V, I

D

= - 17 A - 46 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= - 25 V, f = 1 MHz

- 4896 6120

pF Output Capacitance C

oss

- 480 600

Reverse Transfer Capacitance C

rss

- 348 435

Total Gate Charge

c

Q

g

V

GS

= - 10 V V

DS

= - 30 V, I

D

= - 50 A

- 103 155

nC Gate-Source Charge

c

Q

gs

- 16.6 -

Gate-Drain Charge

c

Q

gd

- 26.6 -

Gate Resistance

R

g

f = 1 MHz 1.3 2.6 3.9 

Turn-On Delay Time

c

t

d(on)

V

DD

= - 30 V, R

L

= 0.6 

I

D

 - 50 A, V

GEN

= - 10 V, R

g

= 1 

-1320

ns

Rise Time

c

t

r

-1015

Turn-Off Delay Time

c

t

d(off)

-6090

Fall Time

c

t

f

-1624

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

- - - 200 A

Forward Voltage V

SD

I

F

= - 30 A, V

GS

= 0 - - 0.9 - 1.5 V

SQM50P06-15L

www.vishay.com

Vishay Siliconix

S12-1847-Rev. B, 30-Jul-12

3

Document Number: 67001

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

16

32

48

64

80

0 3 6 9 12 15

V

GS

=10Vthru5V

V

GS

=4V

V

GS

=2V,1V

V

GS

=3V

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

0

20

40

60

80

100

0 102030405060

I

D

- Drain Current (A)

- Transconductance (S)

g

fs

T

C

= 125 °C

T

C

= 25 °C

T

C

= - 55 °C

C

rss

0

1000

2000

3000

4000

5000

6000

7000

8000

0 102030405060

C

iss

C

oss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0

16

32

48

64

80

0246810

T

C

= - 55 °C

T

C

= 125 °C

T

C

= 25 °C

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (A)

0

0.01

0.02

0.03

0.04

0.05

0 1632486480

V

GS

=10V

V

GS

=4.5V

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

0

2

4

6

8

10

0 20 40 60 80 100 120

I

D

=50A

V

DS

=30V

Q

g

- Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

SQM50P06-15L_GE3

SQM50P06-15L_GE3

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