Obsolete Product(s) - Obsolete Product(s)
STA500
4/11
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
Symbol Parameter Value Unit
V
CE
DC Supply Voltage (Pin 4,7,12,15) 40 V
V
max
Maximum Voltage on pins (23 to 32) 5.5 V
T
op
Operating Temperature Range 0 to 70 °C
T
stg
, T
j
Storage and Junction Temperature -40 to 150 °C
Symbol Parameter Min. Typ. Max. Unit
T
j-case
Thermal Resistance Junction to Case (thermal pad) 2.5 °C/W
T
jSD
Thermal shut-down junction temperature 150 °C
T
warn
Thermal warning temperature 130 °C
t
hSD
Thermal shut-down hysteresis 25 °C
ELECTRICAL CHARACTERISTCS
(Ibias = 3.3V; Vcc = 28V; T
amb
= 25°C unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
R
dsON
Power Pchannel/Nchannel
MOSFET R
dsON
Id=1A; 200 270 mΩ
I
dss
Power Pchannel/Nchannel
leakage I
dss
Vcc=35V 50 µA
g
N
Power Pchannel RdsON
Matching
(*)
Id=1A 95 %
g
P
Power Nchannel RdsON
Matching
(*)
Id=1A 95 %
Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 1 10 20 ns
Dt_d High current Dead Time (dinamic) L=22µH; C = 470nF; Rl = 8Ω
Id = 3.5A; see fig. 3
50 ns
t
d ON
Turn-on delay time Resistive load 100 ns
t
d OFF
Turn-off delay time Resistive load 100 ns
t
r
Rise time Resistive load; as fig. 1 25 ns
t
f
Fall time Resistive load; as fig. 1 25 ns
V
CC
Supply voltage operating voltage 9 V
OV
V
V
IN-H
High level input voltage Ibias/2
+300mV
V
V
IN-L
Low level input voltage Ibias/2
-300mV
V
I
IN-H
Hi level Input current Pin voltage=Ibias 1 µA
I
IN-L
Low level input current Pin voltage = 0.3V 1 µA
I
PWRDN-H
Hi level PWRDN pin input current Ibias = 3.3V 35 µA
V
L
Low logical state voltage VL (pin
PWRDN, TRISTATE) (note 1)
Ibias = 3.3V 0.8 V
V
H
High logical state voltage VH (pin
PWRDN, TRISTATE) (note 1)
Ibias = 3.3V 1.7 V
Obsolete Product(s) - Obsolete Product(s)
