74AHC_AHCT132_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 4 May 2009 6 of 17
NXP Semiconductors
74AHC132; 74AHCT132
Quad 2-input NAND Schmitt trigger
10. Dynamic characteristics
C
O
output
capacitance
-4-----pF
74AHCT132
V
OH
HIGH-level
output voltage
V
I
= V
T+
or V
T−
; V
CC
= 4.5 V
I
O
= −50 µA 4.4 4.5 - 4.4 - 4.4 - V
I
O
= −8.0 mA 3.94 - - 3.80 - 3.70 - V
V
OL
LOW-level
output voltage
V
I
= V
T+
or V
T−
; V
CC
= 4.5 V
I
O
=50µA - 0 0.1 - 0.1 - 0.1 V
I
O
= 8.0 mA - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
- - 0.1 - 1.0 - 2.0 µA
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
= 5.5 V
- - 2.0 - 20 - 40 µA
∆I
CC
additional
supply current
per input pin;
V
I
=V
CC
− 2.1 V; other pins
at V
CC
or GND; I
O
=0A;
V
CC
= 4.5 V to 5.5 V
- - 1.35 - 1.5 - 1.5 mA
C
I
input
capacitance
V
I
=V
CC
or GND - 3 10 - 10 - 10 pF
C
O
output
capacitance
-4-----pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °Cto+85°C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max Min Max
74AHC132
t
pd
propagation
delay
nA, nB to nY; see Figure 6
[2]
V
CC
= 3.0 V to 3.6 V
C
L
= 15 pF - 4.4 11.9 1.0 14.0 1.0 15.0 ns
C
L
= 50 pF - 6.2 15.4 1.0 17.5 1.0 19.5 ns
V
CC
= 4.5 V to 5.5 V
C
L
= 15 pF - 3.3 7.7 1.0 9.0 1.0 10.0 ns
C
L
= 50 pF - 4.7 9.7 1.0 11.0 1.0 12.5 ns
C
PD
power
dissipation
capacitance
f
i
= 1 MHz; V
I
= GND to V
CC
[3]
-11- - - - -pF