VS-GT100NA120UX
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-15
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Document Number: 93100
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
- Insulated Gate Bipolar Transistor (IGBT)
- T = Trench IGBT
- Current rating (100 = 100 A)
- Circuit configuration (N = High side chopper)
- Package indicator (A = SOT-227)
- Voltage rating (120 = 1200 V)
- Speed/type (U = Ultrafast IGBT)
Device code
G T 100 N A 120 U X
- Diode (X = HEXFRED
®
)
51 32 4 6 7 8
- Vishay Semiconductors product
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