ISL43L410IU-T

7
FN6090.2
July 28, 2006
permanent damage, and the sub-microamp input current
produces an insignificant voltage drop during normal
operation.
This method is not acceptable for the signal path inputs.
Adding a series resistor to the switch input defeats the
purpose of using a low R
ON
switch, so two small signal
diodes can be added in series with the supply pins to provide
overvoltage protection for all pins (see Figure 8). These
additional diodes limit the analog signal from 1V below V+ to
1V above GND. The low leakage current performance is
unaffected by this approach, but the switch signal range is
reduced and the resistance may increase, especially at low
supply voltages.
Power-Supply Considerations
The ISL43L410 construction is typical of most single supply
CMOS analog switches, in that they have two supply pins:
V+ and GND. V+ and GND drive the internal CMOS
switches and set their analog voltage limits. Unlike switches
with a 4V maximum supply voltage, the ISL43L410 4.7V
maximum supply voltage provides plenty of room for the
10% tolerance of 3.6V supplies, as well as room for
overshoot and noise spikes.
The minimum recommended supply voltage is 1.65V but the
part will operate with a supply below 1.5V. It is important to
note that the input signal range, switching times, and on-
resistance degrade at lower supply voltages. Refer to the
electrical specification tables and Typical Performance
curves for details.
V+ and GND also power the internal logic and level shifters.
The level shifters convert the input logic levels to switched
V+ and GND signals to drive the analog switch gate
terminals.
This family of switches cannot be operated with bipolar
supplies, because the input switching point becomes
negative in this configuration.
Logic-Level Thresholds
This switch family is 1.8V CMOS compatible (0.5V and 1.4V)
over a supply range of 2.0V to 3.6V (See Figure 15). At 3.6V
the V
IH
level is about 1.27V. This is still below the 1.8V
CMOS guaranteed high output minimum level of 1.4V, but
noise margin is reduced.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
High-Frequency Performance
In 50 systems, the signal response is reasonably flat
even past 30MHz with a -3dB bandwidth of 120MHz (See
Figure 16). The frequency response is very consistent over a
wide V+ range, and for varying analog signal levels.
An OFF switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from a switch’s input to its output. Off Isolation is
the resistance to this feedthrough, while Crosstalk indicates
the amount of feedthrough from one switch to another.
Figure 17 details the high Off Isolation and Crosstalk
rejection provided by this part. At 100kHz, Off Isolation is
about 68dB in 50 systems, decreasing approximately 20dB
per decade as frequency increases. Higher load
impedances decrease Off Isolation and Crosstalk rejection
due to the voltage divider action of the switch OFF
impedance and the load impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal exceeds
V+ or GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analog-
signal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and V+ or GND.
FIGURE 8. OVERVOLTAGE PROTECTION
GND
V
COM
V
NO or NC
OPTIONAL PROTECTION
V+
IN
X
DIODE
OPTIONAL PROTECTION
DIODE
OPTIONAL
PROTECTION
RESISTOR
ISL43L410
8
FN6090.2
July 28, 2006
Typical Performance Curves T
A
= 25°C, Unless Otherwise Specified
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE
FIGURE 11. ON RESISTANCE vs SWITCH VOLTAGE
FIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE
FIGURE 13. TURN - ON TIME vs SUPPLY VOLTAGE FIGURE 14. TURN - OFF TIME vs SUPPLY VOLTAGE
R
ON
()
V
COM
(V)
01234
I
COM
= 100mA
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V+ = 2.7V
V+ = 1.8V
V+ = 1.5V
V+ = 3.6V
V+ = 3V
R
ON
()
V
COM
(V)
00.511.522.53
0.18
0.2
0.22
0.24
0.26
0.28
0.3
0.32
25°C
85°C
-40°C
V+ = 2.7V
I
COM
= 100mA
0 0.5 1 1.5 2
R
ON
()
V
COM
(V)
85°C
-40°C
V+ = 1.8V
I
COM
= 100mA
0.2
0.25
0.3
0.35
0.4
0.45
0.5
25°C
00.511.522.53
Q (pC)
V
COM
(V)
V+ = 1.8V
V+ = 3V
100
75
50
25
0
-50
-25
t
ON
(ns)
V+ (V)
11.522.533.544.5
10
20
30
40
50
60
25°C
85°C
-40°C
t
OFF
(ns)
V+ (V)
1
1.522.533.544.5
3
4
5
6
7
8
9
10
11
12
13
14
85°C
-40°C
25°C
ISL43L410
9
FN6090.2
July 28, 2006
FIGURE 15. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
FIGURE 16. FREQUENCY RESPONSE
FIGURE 17. CROSSTALK AND OFF ISOLATION
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
114
PROCESS:
Submicron CMOS
Typical Performance Curves T
A
= 25°C, Unless Otherwise Specified (Continued)
V+ (V)
V
INH
AND V
INL
(V)
11.522.533.544.5
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
V
INH
V
INL
FREQUENCY (MHz)
0
-20
NORMALIZED GAIN (dB)
GAIN
PHASE
V+ = 3V
0
20
40
60
80
100
PHASE (DEGREES)
1 10 100 600
V
IN
= 0.2V
P-P
to 2V
P-P
R
L
= 50
FREQUENCY (Hz)
1k 100k 1M 100M 500M10k 10M
-110
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
CROSSTALK (dB)
OFF ISOLATION (dB)
110
10
20
30
40
50
60
70
80
90
100
ISOLATION
CROSSTALK
V+ = 3V
ISL43L410

ISL43L410IU-T

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
IC SWITCH DPDT 10MSOP
Lifecycle:
New from this manufacturer.
Delivery:
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