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2N5885G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 11
1 Publication Order Number:
2N5883/D
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon
High−Power Transistors
Complementary silicon high−power transistors are designed for
general−purpose power amplifier and switching applications.
Features
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 1.0 Vdc, (max) at I
C
= 15 Adc
• Low Leakage Current
I
CEX
= 1.0 mAdc (max) at Rated Voltage
• Excellent DC Current Gain −
h
FE
= 20 (min) at I
C
= 10 Adc
• High Current Gain Bandwidth Product −
f
t
= 4.0 MHz (min) at I
C
= 1.0 Adc
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage
2N5883, 2N5885
2N5884, 2N5886
V
CEO
60
80
Vdc
Collector−Base Voltage
2N5883, 2N5885
2N5884, 2N5886
V
CB
60
80
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current −
Continuous
Peak
I
C
25
50
Adc
Base Current I
B
7.5 Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
200
1.15
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
q
JC
0.875 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data. Units and conditions differ on some
parameters and re−registration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
25 AMPERE COMPLEMENTARY
SILICON POWER TRANSISTOR
S
60 − 80 VOLTS, 200 WATTS
MARKING DIAGRAM
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N588x = Device Code
x = 3, 4, 5, or 6
G = Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
2N588xG
AYYWW
MEX
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (Note 2) (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 3) 2N5883, 2N5885
(I
C
= 200 mAdc, I
B
= 0) 2N5884, 2N5886
V
CEO(sus)
60
80
−
−
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0) 2N5883, 2N5885
(V
CE
= 40 Vdc, I
B
= 0) 2N5984, 2N5886
I
CEO
−
−
2.0
2.0
mAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc) 2N5883, 2N5885
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc) 2N5884, 2N5886
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C) 2N5883, 2N5885
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C) 2N5884, 2N5886
I
CEX
−
−
−
−
1.0
1.0
10
10
mAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0) 2N5883, 2N5885
(V
CB
= 80 Vdc, I
E
= 0) 2N5884, 2N5886
I
CBO
−
−
1.0
1.0
mAdc
Emitter Cutoff Current (V
EB
= 5.0 Vdc, I
C
= 0) I
EBO
− 1.0 mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
(I
C
= 25 Adc, V
CE
= 4.0 Vdc)
h
FE
35
20
4.0
−
100
−
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 15 Adc, I
B
= 1.5 Adc)
(I
C
= 25 Adc, I
B
= 6.25 Adc)
V
CE(sat)
−
−
1.0
4.0
Vdc
Base−Emitter Saturation Voltage (Note 3) (I
C
= 25 Adc, I
B
= 6.25 Adc) V
BE(sat)
− 2.5 Vdc
Base−Emitter On Voltage (Note 3) (I
C
= 10 Adc, V
CE
= 4.0 Vdc) V
BE(on)
− 1.5 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4) (I
C
= 1.0 Adc, V
CE
= 10 Vdc, f
test
= 1.0 MHz) f
T
4.0 − MHz
Output Capacitance 2N5883, 2N5884
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz) 2N5885, 2N5886
C
ob
−
−
1000
500
pF
Small−Signal Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f
test
= 1.0 kHz) h
fe
20 − −
SWITCHING CHARACTERISTICS
Rise Time
(V
CC
= 30 Vdc, I
C
= 10 Adc, I
B1
= I
B2
= 1.0 Adc)
t
r
− 0.7
ms
Storage Time t
s
− 1.0
ms
Fall Time t
f
− 0.8
ms
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f
T
= |h
fe
| • f
test
.
200
0
0 25 50 75 100 125 150 200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
175
100
75
50
125
150
25
175
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
http://onsemi.com
3
Figure 2. Switching Time Equivalent Test Circuits
2.0
0.3
Figure 3. Turn−On Time
I
C
, COLLECTOR CURRENT (AMPERES)
t, TIME (s)μ
1.0
0.5
0.2
0.07
0.05
0.02
0.5 0.7 1.0 2.0 3.0 5.0 7.0 30
T
J
= 25°C
I
C
/I
B
= 10
V
CC
= 30 V
V
BE(off)
= 2 V
0.03
0.3
20
0.1
10
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
t
r
t
d
0.7
+2.0 V
0
t
r
≤
20ns
−11V
10 to 100 ms
DUTY CYCLE ≈ 2.0%
R
B
R
L
V
CC
−30 V
TO SCOPE
t
r
≤ 20 ns
V
CC
−30 V
TO SCOPE
t
r
≤ 20 ns
R
L
R
B
+9.0V
0
−11V
10 to 100 ms
DUTY CYCLE ≈ 2.0%
t
r
≤ 20ns
V
BB
+7.0 V
3.0
10
3.0
10
TURN−ON TIME
TURN−OFF TIME
FOR CURVES OF FIGURES 3 & 6, R
B
& R
L
ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.5
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500
q
JC
(t) = r(t) q
JC
q
JC
= 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
SINGLE PULSE
0.1
1000
0.01
100
1.0
Figure 5. Active−Region Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
0.1
2.0 3.0 7.0 10 20 30 50 10
0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25°C
(SINGLE PULSE)
70
2.0
I
C
, COLLECTOR CURRENT (AMPERES)
T
J
= 200°C
CURVES APPLY BELOW RATED V
CEO
dc
500 ms
1ms
1.0
0.5
0.2
5.0
2N5883, 2N5885
2N5884, 2N5886
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 200°C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
P1-P3P4-P6

2N5885G

Mfr. #:
Buy 2N5885G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 25A 60V 200W NPN
Lifecycle:
New from this manufacturer.
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