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IXTA230N04T4
P1-P3
P4-P6
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA230N04T4
IXTP230N04T4
Fi
g. 7. I
nput A
dmi
ttance
0
20
40
60
80
100
120
140
160
180
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
V
GS
- V
olts
I
D
- A
m
p
e
re
s
T
J
= 150º
C
V
DS
= 10V
25º
C
- 40º
C
Fi
g. 8. Tr
ansc
onductance
0
50
100
150
200
250
300
350
400
450
500
0
20
40
60
80
100
120
140
160
180
200
I
D
-
Amper
es
g
f s
- S
ie
m
e
n
s
T
J
= -
40º
C
150º
C
V
DS
= 10V
25º
C
Fi
g. 9. Forw
ard V
ol
tage Dr
op of I
ntri
nsi
c Di
ode
0
50
100
150
200
250
300
0.3
0.4
0
.5
0
.6
0.7
0.8
0
.9
1
.0
1
.1
1
.2
1
.3
1
.4
1
.5
V
SD
- V
o
lts
I
S
- A
m
p
e
re
s
T
J
= 150º
C
T
J
= 25
ºC
Fi
g. 10. Gat
e Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
Q
G
- Nano
C
o
ulo
m
b
s
V
GS
- V
o
l
ts
V
DS
= 20V
I
D
= 115A
I
G
= 10m
A
Fi
g. 11. Capaci
tance
100
1,000
10,000
0
5
10
15
20
25
30
35
40
V
DS
- V
o
lts
Capaci
tance - Pi
coFar
ad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fi
g. 12. Forw
ard-B
ias Saf
e
Oper
ati
ng Area
1
10
100
1,
000
1
10
100
V
DS
- V
o
lts
I
D
-
Amper
es
100µs
1m
s
10m
s
R
DS
(on)
Limit
T
J
= 175º
C
T
C
= 25
º
C
Sin
gl
e Pu
ls
e
DC
Ex
tern
al Lead
C
urren
t L
i
mi
t
© 2016 IXYS CORPORATION, All Rights Reserved
IXTA230N04T4
IXTP230N04T4
Fi
g. 14. Resi
sti
v
e Turn-on Ri
s
e Ti
me
v
s
. Dra
in Curre
nt
100
120
140
160
180
200
110
130
150
170
190
210
230
I
D
-
Amper
es
t
r
-
Nanos
econds
T
J
= 25
ºC
T
J
= 150º
C
R
G
= 10
, V
GS
= 10
V
V
DS
= 20V
Fi
g. 15. Resi
sti
v
e Turn-o
n Sw
i
tchi
ng Ti
mes
v
s. Gate R
esi
stance
0
100
200
300
400
500
600
700
800
900
1000
10
20
30
40
50
60
70
80
R
G
- O
hms
t
r
-
Nanoseconds
0
30
60
90
120
150
180
210
240
270
300
t
d(on)
-
Nanose
conds
t
r
t
d(on)
T
J
= 150º
C, V
GS
= 10V
V
DS
= 2
0V
I
D
= 115A
I
D
= 230A
Fi
g. 16. Resi
s
ti
v
e Turn-off S
w
i
tchi
ng Ti
m
es
v
s. Junctio
n Temperature
0
20
40
60
80
100
120
140
25
50
75
100
125
150
T
J
-
Degrees Cen
t
igr
a
de
t
f
-
Nanosecond
s
60
70
80
90
100
110
120
130
t
d(
off
)
-
Nanoseconds
t
f
t
d(off)
R
G
= 10
, V
GS
= 10
V
V
DS
= 20
V
I
D
= 230A
I
D
= 115A
Fi
g. 13. Resi
sti
v
e
Turn-o
n Ri
se Time
v
s. Ju
ncti
o
n Tem
perature
100
120
140
160
180
200
25
50
75
100
125
150
T
J
-
Degrees Cen
ti
gra
de
t
r
-
Nanos
econds
R
G
= 10
, V
GS
= 10V
V
DS
= 20
V
I
D
= 230A
I
D
= 115A
Fi
g. 17. R
esi
sti
v
e Tur
n-o
ff S
w
i
tch
i
ng Ti
mes
v
s
. Dra
in Curre
n
t
70
75
80
85
90
95
100
105
110
110
130
150
170
190
210
230
I
D
-
Amper
es
t
f
- Nanoseconds
60
70
80
90
100
110
120
130
140
t
d(of
f)
- Nanoseconds
t
f
t
d(off)
R
G
= 10
, V
GS
= 10V
V
DS
= 2
0
V
T
J
= 25
ºC
T
J
= 150º
C
Fi
g. 18. Resi
sti
v
e Turn-
off Sw
itchi
ng Ti
m
es
v
s. Gate R
esi
stance
0
100
200
300
400
500
600
10
20
30
4
0
50
60
R
G
- O
hms
t
f
-
Nanoseconds
50
150
250
350
450
550
650
t
d(of
f)
-
Nanose
conds
t
f
t
d(off)
T
J
= 150º
C, V
GS
= 10V
V
DS
= 2
0
V
I
D
= 115A
I
D
= 230A
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA230N04T4
IXTP230N04T4
Fi
g. 19. M
axi
mum Transi
e
nt Th
ermal
I
mpedance
0.0
01
0.
01
0.1
1
0.0
0001
0.
0001
0.
001
0.0
1
0.1
1
10
Pu
lse Widt
h
- Secon
ds
Z
(th)JC
- K
/ W
IXYS REF: T_230N04T4 (T4-M04) 5-29-16
P1-P3
P4-P6
IXTA230N04T4
Mfr. #:
Buy IXTA230N04T4
Manufacturer:
Littelfuse
Description:
MOSFET DISC MSFT NCHTRENCHGATE-GEN4
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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IXTP230N04T4
IXTA230N04T4