Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3503M04
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10456EJ03V0DS (3rd edition)
Date Published January 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
• Super low noise figure and high associated gain
NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz
• Flat-lead 4-pin thin-type super minimold (M04) package
• Gate width: Wg = 160
m
APPLICATIONS
• DBS LNB gain-stage, Mix-stage
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Flat-lead 4-pin thin-
type super minimold
(M04) (Pb-Free)
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3503M04-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
