VB30100SG-M3/8W

VB30100SG-M3
www.vishay.com
Vishay General Semiconductor
Revision: 15-May-13
1
Document Number: 87986
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.437 V at I
F
= 5 A
FEATURES
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
Package TO-263AB
I
F(AV)
30 A
V
RRM
100 V
I
FSM
250 A
V
F
at I
F
= 30 A 0.76 V
T
J
max. 150 °C
Diode variation Single die
VB30100SG
TO-263AB
NC
A
K
HEATSINK
NC
A
K
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VB30100SG UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig. 1) I
F(AV)
30 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
250 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
- 40 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
(1)
I
F
= 5 A
T
A
= 25 °C
V
F
0.50 -
V
I
F
= 10 A 0.60 -
I
F
= 30 A 0.92 1.00
I
F
= 5 A
T
A
= 125 °C
0.44 -
I
F
= 10 A 0.55 -
I
F
= 30 A 0.76 0.83
Reverse current
(2)
V
R
= 70 V
T
A
= 25 °C
I
R
8.8 - μA
T
A
= 125 °C 6.5 - mA
V
R
= 100 V
T
A
= 25 °C 43 350 μA
T
A
= 125 °C 18 35 mA
VB30100SG-M3
www.vishay.com
Vishay General Semiconductor
Revision: 15-May-13
2
Document Number: 87986
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VB30100SG UNIT
Typical thermal resistance per leg R
JC
2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VB30100SG-M3/4W 1.37 4W 50/tube Tube
TO-263AB VB30100SG-M3/8W 1.37 8W 800/reel Tape and reel
Case Temperature (°C)
Average Forward Current (A)
25
30
35
20
15
10
5
0
0 25 50 75 100 125 150
Resistive or Inductive Load
0
4
8
12
16
20
24
28
32
0 4 8 12 16 20 24 28 32 36
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
VB30100SG-M3
www.vishay.com
Vishay General Semiconductor
Revision: 15-May-13
3
Document Number: 87986
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
100
1000
10 000
0.1 1 10 100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
TO-263AB
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) MIN.
0.33 (8.38) MIN.
0.42 (10.66) MIN.
NCA
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
Mounting Pad Layout

VB30100SG-M3/8W

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 30A,100V,TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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