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FML-G12S

P1-P3P4-P4
SANKEN ELECTRIC CO., LTD. FML-G12S
030812
1／4
61426-01
1. Scope
The present specifications shall apply to an FML-G12S.
2. Outline
Type
Silicon Diode
Structure
Resin Molded
Applications
High Frequency Rectification
3. Flammability
UL94V-0(Equivalent)
4. Absolute maximum ratings
No.
Item
Symbol
Unit
Conditions
1
Transient Peak Reverse Voltage
V
RSM
V
2
Peak Reverse Voltage
V
RM
V
3
Average Forward Current
I
F(AV)
A
Refer to derating curve
in Section 7
4
Peak Surge Forward Current
I
FSM
A
10 ms.
Half sine wave, one shot
5
I
2
t Limiting Value
I
2
t
A
2
s
1 ms ≤ t ≤ 10 ms
6
Junction Temperature
T
j
°C
7
Storage Temperature
T
stg
°C
No.1,2,4&5 show ratings per one chip.
5. Electrical characteristics (Ta=25°C ，unless otherwise specified)
No
.
Item
Symbol
Unit
Value
Conditions
1
Forward Voltage Drop
V
F
V
0.98 max.
I
F
=5.0A
2
Reverse Leakage Current
I
R
µA
100 max.
V
R
=V
RM
3
Reverse Leakage Current Under
High Temperature
H･I
R
µA
200 max.
V
R
=V
RM
, T
j
=150°C
4
Reverse Recovery Time
trr1
ns
40 max.
I
F
=I
RP
=100mA
90% Recovery point, T
j
=25°C
trr2
ns
30 max.
I
F
=100mA,I
RP
=200mA
75% Recovery point ,T
j
=25°C
5
Thermal Resistance
R
th(j-c)
°C/W
4.0 max.
Between Junction and case
SANKEN ELECTRIC CO., LTD. FML-G12S
030812
2／4
61426-01
6. Characteristics
I
F(AV)
－ P
F
Forward Power Dissipation, P
F
(W)
Average Forward Current, I
F(AV)
(A)
V
R
－ P
R
Reverse Power Dissipation , P
R
(W)
Reverse Voltage, V
R
(V)
0.00
0.01
0.02
0.03
0.04
0.05
0 100 200
0.0
2.0
4.0
6.0
8.0
0.0 1.0 2.0 3.0 4.0 5.0
Tj=150°C
t
T
t/T=1/6
t/T=1/3,sinewave
t/T=1/2
DC
Tj=150°C
t
T
1-t/T=5/6
sinewave
1-t/T=2/3
1-t/T=1/2
SANKEN ELECTRIC CO., LTD. FML-G12S
030812
3／4
61426-01
7. Derating
T
c
－ I
F(AV)
V
R
=200(V)
Average Forward Current, I
F(AV)
(A)
Case Temperature, T
C
(°C)
0.0
1.0
2.0
3.0
4.0
5.0
100 110 120 130 140 150
Tj=150°C
t
T
t/T=1/6
t/T=1/2
DC
t/T=1/3,Sinewave
P1-P3P4-P4

FML-G12S

Mfr. #:
Buy FML-G12S
Manufacturer:
Description:
Diode Switching 200V 5A 2-Pin(2+Tab) TO-220F
Lifecycle:
New from this manufacturer.
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