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BSC22DN20NS3GATMA1

P1-P3P4-P6P7-P9
Type
BSC22DN20NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Low on-resistance R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
7.0 A
T
C
=100 °C
4.9
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
28
Avalanche energy, single pulse
E
AS
I
D
=3.5 A, R
GS
=25 Ω
30 mJ
Reverse diode dv /dt dv /dt 10 kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
34 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
1)
J-STD20 and JESD22
2)
see figure 3
V
DS
200 V
R
DS(on),max
225
mΩ
I
D
7 A
Product Summary
Type Package Marking
BSC22DN20NS3 G PG-TDSON-8 22DN20NS
PG-TDSON-8
Rev. 2.2 page 1 2011-05-20
BSC22DN20NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 3.7 K/W
R
thJA
6 cm
2
cooling area
3)
--50
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
200 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=13 µA
234
Zero gate voltage drain current
I
DSS
V
DS
=160 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=160 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=3.5 A
- 194 225
mΩ
Gate resistance
R
G
- 1.6 -
Ω
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=3.5 A
3.5 7 - S
Values
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Thermal resistance,
junction - ambient
Rev. 2.2 page 2 2011-05-20
BSC22DN20NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 320 430 pF
Output capacitance
C
oss
-2432
Reverse transfer capacitance
C
rss
- 5.1 -
Turn-on delay time
t
d(on)
-4-ns
Rise time
t
r
- 4.0 -
Turn-off delay time
t
d(off)
-6-
Fall time
t
f
-3-
Gate Char
g
e Characteristics
4)
Gate to source charge
Q
gs
- 1.4 - nC
Gate to drain charge
Q
gd
- 0.8 -
Switching charge
Q
sw
- 1.3 -
Gate charge total
Q
g
- 4.2 5.6
Gate plateau voltage
V
plateau
- 4.5 - V
Output charge
Q
oss
V
DD
=100 V, V
GS
=0 V
- 8 11 nC
Reverse Diode
Diode continous forward current
I
S
--7A
Diode pulse current
I
S,pulse
--28
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=7 A,
T
j
=25 °C
- 1 1.2 V
Reverse recovery time
t
rr
-70-ns
Reverse recovery charge
Q
rr
- 156 - nC
4)
See figure 16 for gate charge parameter definition
V
R
=100 V, I
F
=I
S
,
di
F
/dt =100 A/µs
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=100 V,
f =1 MHz
V
DD
=100 V,
V
GS
=10 V, I
D
=3.5 A,
R
G
=1.6 Ω
V
DD
=100 V, I
D
=3.5 A,
V
GS
=0 to 10 V
Rev. 2.2 page 3 2011-05-20
P1-P3P4-P6P7-P9

BSC22DN20NS3GATMA1

Mfr. #:
Buy BSC22DN20NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
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