PI5L100
Wide-Bandwidth, Low-Voltage
LanSwitch Quad 2:1 Mux/Demux
2
PS7031F 09/17/04
Storage Temperature ........................................................ –65°C to +150°C
Ambient Temperature with Power Applied ............................ 0°C to +70°C
Supply Voltage to Ground Potential ................................... –0.5V to +7.0V
DC Input Voltage ................................................................ –0.5V to +7.0V
DC Output Current ......................................................................... 120 mA
Power Dissipation .............................................................................. 0.5W
Note:
Stresses greater than those listed under MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may
affect reliability.
DC Electrical Characteristics (Over the Operating Range, T
A
= 0°C to +70°C, V
CC
= 6.2V, +5%, – 2%)
Notes:
1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 6.2V, T
A
= 25°C ambient temperature.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. V
ON (min) value is at V
CC
= 6.1V, T
A
= 70°C.
5. The expected AC V
ON
value is about 125 mV higher than the DC V
ON
value using the similar test circuit in Figure 10 with V
IN
swing from 0.0V
to 4.5V at 10 MHz sine wave.
6. The value of R
ON
of M1 is calculated with the equvalent mathematical formula of the test circuit in Figure 10.
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
retemaraPnoitpircseDsnoitidnoCtseT.niMpyT
)2(
.xaMstinU
V
HI
egatloVHGIHtupnIleveLHGIHcigoLdeetnarauG0.2——V
V
LI
egatloVWOLtupnIleveLWOLcigoLdeetnarauG5.0–—8.0
AµI
HI
tnerruCHGIHtupnIV
CC
V,.xaM=
NI
V=
CC
—— 1±
I
LI
tnerruCWOLtupnIV
CC
V,.xaM=
NI=
DNG——1±
I
HZO
tnerruCtuptuOecnadepmIhgiH0≤ B,A ≤ V
CC
—— 1±V
V
KI
egatloVedoiDpmalCV
CC
I,.niM=
NI
Am81–=—7.0–2.1–
Am
I
SO
tnerruCtiucriCtrohS
)3(
V=)A(B,V0=)B(A
CC
001——
V
H
sniPlortnoCtasiseretsyHtupnI —051—Vm
V
NO
egatloVnOhctiwSV
NI
R,01erugiFeeS,WOL=E,V5.4=
L
001= Ω 7.3
)4(
60.4
)5(
—V
R
NO
)6(
ecnatsiseRnOhctiwS1MVmorfdetaluclaC
NO
912.11—
Ω
R
NO
)7(
ecnatsiseRnOhctiwS2MV
NI
R,01erugiFeeS,WOL=E,V5.4=
L
001= Ω 0.20.3—
∆R
NO
hctaMecnatsiseRnOV
NI
WOL=E,V5.4=—0.1—
7. This parameter is determined by device characterization but is not production tested.
R
ON
(M1) =
were
with R
ON
(M2) = 3 ohms
V
IN
– V
ON
I
ON
I
ON
=
V
ON
R
L
+ R
ON
(M2)
