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SI8800EDB-T2-E1

P1-P3P4-P6P7-P8
Si8800EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. D, 23-Feb-15
1
Document Number: 66700
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 20 V (D-S) MOSFET
Marking Code: xx = AA
xxx = Date/Lot traceability code
Ordering Information:
Si8800EDB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.357 mm height
• Typical ESD protection 1500 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Portable devices such as cell
phones, smart phones, and MP3
players
- Load switch
- Small signal switch
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
a
Q
g
(TYP.)
20
0.080 at V
GS
= 4.5 V 2.8
3.2 nC
0.090 at V
GS
= 2.5 V 2.6
0.105 at V
GS
= 1.8 V 2.4
0.150 at V
GS
= 1.5 V 2.0
MICRO FOOT
®
0.8 x 0.8
Backside View
1
0.8 mm
0.8 mm
xxx
xx
Bump Side View
1
G
4
D
S
3
S
2
1
G
4
S
3
2
D
S
G
R
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
20
V
Gate-Source Voltage V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
T
A
= 25 °C
I
D
2.8
a
A
T
A
= 70 °C 2.2
a
T
A
= 25 °C 2
b
T
A
= 70 °C 1.6
b
Pulsed Drain Current I
DM
15
Continuous Source-Drain Diode Current
T
A
= 25 °C
I
S
0.7
a
T
A
= 25 °C 0.4
b
Maximum Power Dissipation
T
A
= 25 °C
P
D
0.9
a
W
T
A
= 70 °C 0.6
a
T
A
= 25 °C 0.5
b
T
A
= 70 °C 0.3
b
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
a, d
t ≤ 5 s R
thJA
105 135
°C/W
Maximum Junction-to-Ambient
b, e
200 260
Si8800EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. D, 23-Feb-15
2
Document Number: 66700
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 20 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 μA
-18-
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
--2.3-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.4 - 1 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V - - ± 0.5
μA
V
DS
= 0 V, V
GS
= ± 8 V - - ± 6
Zero Gate Voltage Drain Current I
DSS
V
DS
= 20 V, V
GS
= 0 V - - 1
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C - - 10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 4.5 V 10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 1 A - 0.066 0.080
Ω
V
GS
= 2.5 V, I
D
= 1 A - 0.072 0.090
V
GS
= 1.8 V, I
D
= 1 A - 0.082 0.105
V
GS
= 1.5 V, I
D
= 0.5 A - 0.095 0.150
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 1 A - 10 - S
Dynamic
b
Total Gate Charge Q
g
V
DS
= 10 V, V
GS
= 8 V, I
D
= 1 A - 5.5 8.3
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1 A
-3.25
Gate-Source Charge Q
gs
-0.42-
Gate-Drain Charge Q
gd
-0.5-
Gate Resistance R
g
f = 1 MHz - 1 - kΩ
Turn-On Delay Time t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1 A, V
GEN
= 4.5 V, R
g
= 1 Ω
-65130
ns
Rise Time t
r
-85170
Turn-Off Delay Time t
d(off)
- 900 1800
Fall Time t
f
- 350 700
Turn-On Delay Time t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1 A, V
GEN
= 8 V, R
g
= 1 Ω
-2550
Rise Time t
r
-4080
Turn-Off Delay Time t
d(off)
- 1100 2200
Fall Time t
f
- 350 700
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C - - 0.7
A
Pulse Diode Forward Current I
SM
--15
Body Diode Voltage V
SD
I
S
= 1 A, V
GS
= 0 V - 1 1.5 V
Body Diode Reverse Recovery Time t
rr
I
F
= 1 A, dI/dt = 100 A/μs, T
J
= 25 °C
-1325ns
Body Diode Reverse Recovery Charge Q
rr
-510nC
Reverse Recovery Fall Time t
a
-8-
ns
Reverse Recovery Rise Time t
b
-5-
Si8800EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. D, 23-Feb-15
3
Document Number: 66700
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Gate Charge
- Gate Current (mA)I
GSS
V
GS
- Gate-to-Source Voltage (V)
0.0
0.3
0.6
0.9
1.2
1.5
0 3 6 9 12 15
T
J
= 25 °C
0
3
6
9
12
15
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=5Vthru2V
V
GS
=1V
V
GS
=1.5V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.00
0.03
0.06
0.09
0.12
0.15
0 3 6 9 12 15
V
GS
=1.8V
V
GS
=1.5V
V
GS
=2.5V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
- Gate Current (A)I
GSS
V
GS
- Gate-to-Source Voltage (V)
10
-11
10
-9
10
-7
10
-5
10
-3
10
-1
0 3 6 9 12 15
T
J
= 150 °C
T
J
= 25 °C
0
1
2
3
4
5
0.0 0.3 0.6 0.9 1.2 1.5
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
2
4
6
8
0123456
I
D
=1A
V
DS
=5V
V
DS
=16V
V
DS
=10V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
P1-P3P4-P6P7-P8

SI8800EDB-T2-E1

Mfr. #:
Buy SI8800EDB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
Lifecycle:
New from this manufacturer.
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