8
Package Characteristics
Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. Note
Input-Output Momentary V
ISO
3750 V
rms
T
A
= 25°C, RH < 50% 8, 9
Withstand Voltage
Input-Output Resistance R
I-O
10
12
Ω V
I-O
= 500 V 9
Input-Output Capacitance C
I-O
0.6 pF Freq = 1 MHz
Notes:
1. Derate linearly above 70°C free air temperature at a rate of 0.3 mA/°C.
2. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs with I
O
peak
minimum = 0.2 A. See Application section for additional details on limiting I
OL
peak.
3. Derate linearly above 85°C, free air temperature at the rate of 4.0 mW/°C.
4. Input power dissipation does not require derating.
5. Maximum pulse width = 50 µs, maximum duty cycle = 0.5%.
6. In this test, V
OH
is measured with a DC load current. When driving capacitive load V
OH
will approach V
CC
as I
OH
approaches zero amps.
7. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
8. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage >4500 V
rms
for 1 second (leakage detec-
tion current limit I
I-O
< 5 µA). This test is performed before 100% production test for partial discharge (method B) shown in the IEC/EN/DIN EN
60747-5-2 Insulation Characteristics Table, if applicable.
9. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
10. PDD is the dierence between t
PHL
and t
PLH
between any two parts or channels under the same test conditions.
11. Common mode transient immunity in the high state is the maximum tolerable |dV
CM
/dt| of the common mode pulse V
CM
to assure that the
output will remain in the high state (i.e. V
O
> 6.0 V).
12. Common mode transient immunity in a low state is the maximum tolerable |dV
CM
/dt| of the common mode pulse, V
CM
, to assure that the output
will remain in a low state (i.e. V
O
< 1.0 V).
13. This load condition approximates the gate load of a 1200 V/20 A IGBT.
14. The power supply current increases when operating frequency and C
g
of the driven IGBT increases.
Figure 1. V
OH
vs. temperature.
Figure 2. V
OH
vs. I
OH
.
Figure 3. V
OL
vs. temperature.
(V
OH
-V
CC
) – HIGH OUTPUT VOLTAGE DROP – V
-50
-2.5
T
A
– TEMPERATURE – C
125-25
0
0 25 75 10050
-2.0
-1.5
-1.0
-0.5
0
I
OH
– OUTPUT HIGH CURRENT – A
0
0.2 0.4
-4
-3
-1
(V
OH
-V
CC
) – OUTPUT HIGH VOLTAGE DROP – V
-2
V
OL
– OUTPUT LOW VOLTAGE – V
-50
0.39
T
A
– TEMPERATURE – C
125-25
0.44
0 25 75 10050
0.40
0.41
0.42
0.43
