FDZ209N Rev B2 (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min
Typ Max
Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
Drain-Source Avalanche Energy Single Pulse, V
DD
= 30 V, 90 mJ
I
AR
Drain-Source Avalanche Current I
D
= 4 A 4 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA 60 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C 59 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 48 V, V
GS
= 0 V 1 µA
I
GSS
Gate–Body Leakage. V
GS
= ±20 V, V
DS
= 0 V ±100
nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA 1 2.5 3 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
–6 mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 5 V, I
D
= 4 A
V
GS
= 5 V, I
D
= 4 A, T
J
=125°C
60
91
80
130
mΩ
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 4 A 12 S
Dynamic Characteristics
C
iss
Input Capacitance 657 pF
C
oss
Output Capacitance 76 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
32 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 1.5
Ω
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 18 32 ns
t
r
Turn–On Rise Time 4 8 ns
t
d(off)
Turn–Off Delay Time 15 27 ns
t
f
Turn–Off Fall Time
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 5 V, R
GEN
= 6 Ω
8 16 ns
Q
g
Total Gate Charge 6.3 9 nC
Q
gs
Gate–Source Charge 2.5 nC
Q
gd
Gate–Drain Charge
V
DS
= 30 V, I
D
= 4 A,
V
GS
= 5 V
2.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 1.7 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.7 A (Note 2) 0.77 1.2 V
t
rr
Diode Reverse Recovery Time 27 nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 4A
d
iF
/d
t
= 100 A/µs (Note 2)
45 nC
Notes:
1. R
θJA
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R
θJB
, is defined for reference. For R
θJC
, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θJC
and R
θJB
are guaranteed by design while R
θJA
is determined by the user's board design.
a) 64°C/W when
mounted on a 1in
2
pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b) 128°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
