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Document Number: 67327
S12-2727-Rev. A, 12-Nov-12
Vishay Siliconix
Si1480DH
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 100 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
54
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 4.1
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 1.6 3 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V 1
µA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C 10
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V 6 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 1.9 A 0.161 0.200
V
GS
= 4.5 V, I
D
= 1.5 A 0.230 0.320
Forward Transconductance g
fs
V
DS
= 10 V, I
D
= 1.9 A 3.7 S
Dynamic
b
Input Capacitance C
iss
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
130
pFOutput Capacitance C
oss
54
Reverse Transfer Capacitance C
rss
10
Total Gate Charge Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 2.7 A 3.3 5
nC
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 2.7 A
1.8 2.7
Gate-Source Charge Q
gs
0.7
Gate-Drain Charge Q
gd
1
Gate Resistance R
g
f = 1 MHz 1.3 6.5 13
Tur n - On D el ay Tim e t
d(on)
V
DD
= 50 V, R
L
= 23
I
D
2.2 A, V
GEN
= 4.5 V, R
g
= 1
15 30
ns
Rise Time t
r
45 90
Turn-Off DelayTime t
d(off)
11 20
Fall Time t
f
13 25
Tur n - On D el ay Tim e t
d(on)
V
DD
= 50 V, R
L
= 23
I
D
2.2 A, V
GEN
= 10 V, R
g
= 1
510
ns
Rise Time t
r
11 20
Turn-Off DelayTime t
d(off)
10 20
Fall Time t
f
10 20
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current I
S
T
C
= 25 °C 2.3
A
Pulse Diode Forward Current
a
I
SM
7
Body Diode Voltage V
SD
I
S
= 2.2 A, V
GS
= 0 V 0.9 1.2 V
Body Diode Reverse Recovery Charge Q
rr
I
F
= 2.2 A, dI/dt = 100 A/µs,
T
J
= 25 °C
20 40 nC
Body Diode Reverse Recovery Time t
rr
25 50
nsReverse Recovery Fall Time t
a
18
Reverse Recovery Rise Time t
b
7
