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BSS87E6327T

P1-P3P4-P6P7-P9
2016-05-30
Page 1
BSS87
Rev.
2.0
S
IPMOS
Ò
Small-Signal-Transistor
Product Summary
V
DS
240 V
R
DS(on)
6 W
I
D
0.26
A
Feature
· N-Channel
· Enhancement mode, Logic Level
· dv/dt rated
· Pb-free lead plating; RoHS compliant
2
1
3
VPS05558
2
Marking
KA
Type Package Pb-free Tape and Reel Information
BSS87
P-SOT89-4-2 Yes
H6327
: 1000 pcs/reel
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
0.26
0.21
A
Pulsed drain current
T
A
=25°C
I
D puls
1.04
Reverse diode dv/dt
I
S
=0.26A, V
DS
=192V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
6 kV/µs
Gate source voltage V
GS
±20
V
ESD class (JESD22-A114-HBM) 1A (>250V, <500V)
Power dissipation, related to min. footprint
T
A
=25°C
P
tot
1 W
Operating and storage temperature T
j
,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56
• Qualified according to AEC Q101
•
HalogenfreeaccordingtoIE C61249221
2016-05-30
Page 2
BSS87
Rev.
2.0
Thermal Characteristics
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
(Pin 2)
R
thJC
- - 10 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
125
70
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=250µA
V
(BR)DSS
240 - - V
Gate threshold voltage, V
GS
= V
DS
I
D
=108µA
V
GS(th)
0.8 1.2 1.8
Zero gate voltage drain current
V
DS
=240V, V
GS
=0, T
j
=25°C
V
DS
=240V, V
GS
=0, T
j
=150°C
I
DSS
-
-
-
-
0.1
100
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0
I
GSS
- - 10 nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=0.24A
R
DS(on)
- 4.6 7.5
W
Drain-source on-state resistance
V
GS
=10V, I
D
=0.26A
R
DS(on)
- 3.9 6
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2016-05-30
Page 3
BSS87
Rev.
2.0
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
³2*I
D
*R
DS(on)max
,
I
D
=0.21A
0.16 0.33 - S
Input capacitance C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
- 77.5 97 pF
Output capacitance C
oss
- 11.2 14
Reverse transfer capacitance C
rss
- 5.8 7.3
Turn-on delay time t
d(on)
V
DD
=120V, V
GS
=10V,
I
D
=0.28A, R
G
=6W
- 3.7 5.5 ns
Rise time t
r
- 3.5 5.2
Turn-off delay time t
d(off)
- 17.6 26.4
Fall time t
f
- 27.3 41
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=192V, I
D
=0.26A - 0.14 0.21 nC
Gate to drain charge Q
gd
- 1.7 2.5
Gate charge total Q
g
V
DD
=192V, I
D
=0.26A,
V
GS
=0 to 10V
- 3.7 5.5
Gate plateau voltage V
(plateau)
V
DD
=192V, I
D
= 0.26 A - 2.7 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C - - 0.26 A
Inv. diode direct current, pulsed I
SM
- - 1.04
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
- 0.82 1.2 V
Reverse recovery time t
rr
V
R
=120V, I
F
=
l
S
,
di
F
/dt=100A/µs
- 53.6 80.4 ns
Reverse recovery charge Q
rr
- 101 152 nC
P1-P3P4-P6P7-P9

BSS87E6327T

Mfr. #:
Buy BSS87E6327T
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 240V 260MA SOT-89
Lifecycle:
New from this manufacturer.
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