Vishay Siliconix
Si1433DH
Document Number: 72323
S10-0935-Rev. C, 19-Apr-10
www.vishay.com
1
P-Channel 30 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs: 1.8 V Rated
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches
- Notebook PC
- Servers
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 30
0.150 at V
GS
= - 10 V - 2.2
0.260 at V
GS
= - 4.5 V - 1.6
Ordering Information: Si1433DH-T1-E3 (Lead (Pb)-free)
Si1433DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
D
D
G
D
D
S
Marking Code
BE XX
Lot Traceability
and Date Code
Part # Code
YY
Notes:
a. Surface mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage V
DS
- 30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 2.2 - 1.9
A
T
A
= 85 °C - 1.7 - 1.4
Pulsed Drain Current I
DM
- 8
Continuous Diode Current (Diode Conduction)
a
I
S
- 1.4 - 0.9
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.45 0.95
W
T
A
= 85 °C 0.75 0.5
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
65 85
°C/WSteady State 105 130
Maximum Junction-to-Foot (Drain) Steady State R
thJF
38 48