BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
1
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
●
62.5 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Minimum h
FE
of 750 at 3 V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100 Ω,
V
BE(off)
= 0, R
S
= 0.1 Ω, V
CC
= -20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BD646
BD648
BD650
BD652
V
CBO
-80
-100
-120
-140
V
Collector-emitter voltage (I
B
= 0)
BD646
BD648
BD650
BD652
V
CEO
-60
-80
-100
-120
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-8 A
Peak collector current (see Note 1) I
CM
-12 A
Continuous base current I
B
-0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
62.5 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
2W
Unclamped inductive load energy (see Note 4) ½LI
C
2
50 mJ
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
260 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
