2STA2120

November 2008 Rev 3 1/8
8
2STA2120
High power PNP epitaxial planar bipolar transistor
Features
High breakdown voltage V
CEO
= -250 V
Complementary to 2STC5948
Typical f
t
= 25 MHz
Fully characterized at 125
o
C
Application
Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
TO-3P
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
2STA2120 2STA2120 TO-3P Tube
ww w.st.com
Obsolete Product(s) - Obsolete Product(s)
Electrical ratings 2STA2120
2/8
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) -250 V
V
CEO
Collector-emitter voltage (I
B
= 0) -250 V
V
EBO
Emitter-base voltage (I
C
= 0) -6 V
I
C
Collector current -17 A
I
CM
Collector peak current (t
P
< 5 ms) -34 A
P
TOT
Total dissipation at T
c
= 25 °C 200 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case __________ __max 0.625 °C/W
Obsolete Product(s) - Obsolete Product(s)
2STA2120 Electrical characteristics
3/8
2 Electrical characteristics
(T
case
= 25 °C; unless otherwise specified)
1. Pulsed duration = 300 µs, duty cycle
1.5%
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= -250 V -5 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= -6 V -5 µA
V
(BR)CEO
(1)
Collector-emitter
breakdown voltage (I
B
= 0)
I
C
= -50 mA -250 V
V
(BR)CBO
Collector-base breakdown
voltage (I
E
= 0)
I
C
= -100 µA -250 V
V
(BR)EBO
(1)
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= -1 mA -6 V
V
CE(sat)
(1)
Collector-emitter saturation
voltage
I
C
= -8 A I
B
= -800 mA -3 V
V
BE
(1)
Base-emitter voltage I
C
= -7 A V
CE
= -5 V -1.5 V
h
FE
DC current gain
I
C
= -1 A V
CE
= -5 V
I
C
= -7 A V
CE
= -5 V
80
35
160
f
T
Transition frequency I
C
= -1 A V
CE
= -5 V 25 MHz
Obsolete Product(s) - Obsolete Product(s)

2STA2120

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT PNP Power Transisto
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet