November 2008 Rev 3 1/8
8
2STA2120
High power PNP epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
CEO
= -250 V
■ Complementary to 2STC5948
■ Typical f
t
= 25 MHz
■ Fully characterized at 125
o
C
Application
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
TO-3P
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
2STA2120 2STA2120 TO-3P Tube
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