SIHW61N65EF-GE3 Datasheet SIHW61N65EF-GE3 | P1-P3

SiHW61N65EF

www.vishay.com

Vishay Siliconix

S17-0296-Rev. B, 27-Feb-17

1

Document Number: 91878

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET with Fast Body Diode

FEATURES

• Fast body diode MOSFET using E series

technology

• Reduced t

rr

, Q

rr

, and I

RRM

• Low figure-of-merit (FOM) R

on

x Q

g

• Low input capacitance (C

iss

)

• Low switching losses due to reduced Q

rr

• Ultra low gate charge (Q

g

)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Lighting

- High-intensity lighting (HID)

- Light emitting diodes (LEDs)

• Consumer and computing

- ATX power supplies

• Industrial

- Welding

- Battery chargers

• Renewable energy

- Solar (PV inverters)

• Switching mode power supplies (SMPS)

• Applications using the following topologies

- LLC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 140 V, starting T

J

= 25 °C, L = 28.2 mH, R

g

= 25 , I

AS

= 9 A.

c. 1.6 mm from case.

d. I

SD

 I

D

, dI/dt = 500 A/μs, starting T

J

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 700

R

DS(on)

typ. at 25 °C ()V

GS

= 10 V 0.041

Q

g

max. (nC) 371

Q

gs

(nC) 65

Q

gd

(nC) 93

Configuration Single

N-Channel MOSFET

G

D

S

TO-247AD

G

D

S

D

S

ORDERING INFORMATION

Package TO-247AD

Lead (Pb)-Free and Halogen-Free SiHW61N65EF-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

650

V

Gate-Source Voltage V

GS

± 30

Continuous Drain Current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

64

AT

C

= 100 °C 41

Pulsed Drain Current

a

I

DM

199

Linear Derating Factor 4.2 W/°C

Single Pulse Avalanche Energy

b

E

AS

1142 mJ

Maximum Power Dissipation P

D

520 W

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150 °C

Drain-Source Voltage Slope T

J

= 125 °C

dV/dt

70

V/ns

Reverse Diode dV/dt

d

50

Soldering Recommendations (Peak temperature)

c

For 10 s 300 °C

SiHW61N65EF

www.vishay.com

Vishay Siliconix

S17-0296-Rev. B, 27-Feb-17

2

Document Number: 91878

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. C

oss(er)

is a fixed capacitance that gives the same energy as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

b. C

oss(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-40

°C/W

Maximum Junction-to-Case (Drain) R

thJC

-0.24

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 650 - - V

V

DS

Temperature Coefficient V

DS

/T

J

Reference to 25 °C, I

D

= 10 mA - 0.81 - V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.0 - 4.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

V

GS

= ± 30 V - - ± 1 μA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 520 V, V

GS

= 0 V - - 1

μA

V

DS

= 520 V, V

GS

= 0 V, T

J

= 125 °C - - 500

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 30.5 A - 0.041 0.047 

Forward Transconductance g

fs

V

DS

= 30 V, I

D

= 30.5 A - 23 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

-7407-

pF

Output Capacitance C

oss

-351-

Reverse Transfer Capacitance C

rss

-3-

Effective Output Capacitance, Energy

C

o(er)

V

DS

= 0 V to 520 V, V

GS

= 0 V

-233-

Effective Output Capacitance, Time

C

o(tr)

-939-

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 30.5 A, V

DS

= 520 V

- 247 371

nC Gate-Source Charge Q

gs

-65-

Gate-Drain Charge Q

gd

-93-

Turn-On Delay Time t

d(on)

V

DD

= 520 V, I

D

= 30.5 A,

V

GS

= 10 V, R

g

= 9.1 

-5989

ns

Rise Time t

r

- 107 161

Turn-Off Delay Time t

d(off)

- 217 326

Fall Time t

f

- 133 200

Gate Input Resistance R

g

f = 1 MHz, open drain 0.5 1 2 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the 

integral reverse

p - n junction diode

--64

A

Pulsed Diode Forward Current I

SM

- - 199

Diode Forward Voltage V

SD

T

J

= 25 °C, I

S

= 30.5 A, V

GS

= 0 V - 0.9 1.2 V

Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

= 30.5 A,

dI/dt = 100 A/μs, V

R

= 400 V

- 212 474 ns

Reverse Recovery Charge Q

rr

-2.13.8μC

Reverse Recovery Current I

RRM

-18- A

S

D

G

SiHW61N65EF

www.vishay.com

Vishay Siliconix

S17-0296-Rev. B, 27-Feb-17

3

Document Number: 91878

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - C

oss

and E

oss

vs. V

DS

0

50

100

150

200

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 25 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

30

60

90

120

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 150 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

50

100

150

200

250

0 5 10 15 20 25

I

D

, Drain-to-Source Current (A)

V

GS

, Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

V

DS

= 19.2 V

0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

R

DS(on)

, Drain-to-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

I

D

= 30.5 A

V

GS

= 10 V

0.1

1

10

100

1000

10 000

100 000

0 100 200 300 400 500 600

C, Capacitance (pF)

V

DS

, Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0

5

10

15

20

25

30

35

40

45

50

500

5000

0 100 200 300 400 500 600

E

oss

(μJ)

C

oss

(pF)

V

DS

C

oss

E

oss

SIHW61N65EF-GE3

SIHW61N65EF-GE3

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