2001 Jan 18 3
NXP Semiconductors Product data sheet
Schottky barrier (double) diodes
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Refer to (SOT323; SC-70) standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
Note
1. Pulsed test: t
p
= 300 μs; δ = 0.02.
SYMBOL PARAMETER MIN. MAX. UNIT
Per diode
V
R
continuous reverse voltage − 15 V
I
F
continuous forward current − 30 mA
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 125 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
forward voltage see Fig.6
I
F
= 1 mA − 340 mV
I
F
= 30 mA − 700 mV
r
D
differential diode forward resistance f = 1 MHz; I
F
= 5 mA; see Fig.9 12 − Ω
I
R
continuous reverse current V
R
= 1 V; note 1; see Fig.7 − 0.2 μA
C
d
diode capacitance V
R
= 0; f = 1 MHz; see Fig.8 1 − pF