PSMN7R6-60PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 28 October 2010 6 of 14
NXP Semiconductors
PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
- 0.86 1.2 V
t
rr
reverse recovery time I
S
=25A; dI
S
/dt = 100 A/µs;
V
GS
=0V; V
DS
=30V
- 40.4 - ns
Q
r
recovered charge - 56 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Forward transconductance as a function of
drain current; typical values
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
0
20
40
60
80
100
00.511.52
V
DS
(V)
I
D
(A)
10
15
6.0
V
GS
(V) = 4.5
5.0
5.5
8.0
003aad663
003aad669
0
40
80
120
160
0 20406080100
I
D
(A)
g
fs
(S)
003aad665
0
20
40
60
80
100
0246
V
GS
(V)
I
D
(A)
T
j
= 175 °C
T
j
= 25 °C
003aad664
0
1000
2000
3000
4000
0 5 10 15 20
V
GS
(V)
C
(pF)
C
rss
C
iss
