© 2004 IXYS All rights reserved
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FMD 21-05QC
FDM 21-05QC
439
IXYS reserves the right to change limits, test conditions and dimensions.
I
D25
= 21 A
V
DSS
= 500 V
R
DSon typ.
= 190 m
ΩΩ
ΩΩ
Ω
Q-Class
Power MOSFETs
Chopper Topologies
in ISOPLUS i4-PAC
TM
Features
• Q-Class Power MOSFET technology
- low R
DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
• HiPerDyn
TM
FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
• ISOPLUS i4-PAC
TM
package
- isolated back surface
- UL registered E72873
- low coupling capacity
between pins and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
Applications
• chopper for power factor correction
• supply of high frequency transformer
- switched mode power supplies
- welding converters
Preliminary data
3
4
5
2
MOSFET
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C 500 V
V
GS
±20 V
I
D25
T
C
= 25°C 21 A
I
D90
T
C
= 90°C 15 A
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
220 mΩ
V
GSth
V
DS
= 20 V;
I
D
= 0.25 mA 2.5 4.5 V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C 250 µA
T
VJ
= 125°C 250 µA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V 200 nA
Q
g
95 nC
Q
gs
20 nC
Q
gd
42 nC
t
d(on)
20 ns
t
r
20 ns
t
d(off)
50 ns
t
f
15 ns
R
thJC
0.5 K/W
R
thJH
with heat transfer paste 0.93 K/W
V
GS
= 10 V; V
DS
= 0.5 • V
DSS
; I
D
= 14 A
V
GS
= 10 V; V
DS
= 0.5 • V
DSS
I
D
= 14 A; R
G
= 2 Ω
1
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FDMFMD
3
4
1
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