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SZNUP4301MR6T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 7
1 Publication Order Number:
NUP4301MR6T1/D
NUP4301MR6,
SZNUP4301MR6
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
SZ/NUP4301MR6T1G is a micro−integrated device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
• Low Capacitance (1.5 pf Maximum Between I/O Lines)
• Single Package Integration Design
• Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
• Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
• Ensures Data Line Speed and Integrity
• Fewer Components and Less Board Space
• Direct the Transient to Either Positive Side or to the Ground
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device*
Applications
• USB 1.1 and 2.0 Data Line Protection
• T1/E1 Secondary IC Protection
• T3/E3 Secondary IC Protection
• HDSL, IDSL Secondary IC Protection
• Video Line Protection
• Microcontroller Input Protection
• Base Stations
• I
2
C Bus Protection
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING DIAGRAM
64 = Device Code
M = Date Code*
G = Pb−Free Package
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NUP4301MR6T1G SC−74
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
64M G
G
1
6 I/O
5 V
P
4 I/O
I/O 1
V
N
2
1/O 3
PIN CONFIGURATION
AND SCHEMATIC
SC−74
CASE 318F
(Note: Microdot may be in either location.
*Date Code orientation may vary depending up-
on manufacturing location.
SZNUP4301MR6T1G SC−74
(Pb−Free)
3,000 /
Tape & Reel
NUP4301MR6, SZNUP4301MR6
http://onsemi.com
2
MAXIMUM RATINGS (Each Diode) (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
Repetitive Peak Reverse Voltage V
RRM
70 V
Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) I
F(AV)
715 mA
Repetitive Peak Forward Current I
FRM
450 mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
I
FSM
2.0
1.0
0.5
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Lead Solder Temperature, Maximum 10 Seconds Duration T
L
260 °C
Junction Temperature T
J
−40 to +150 °C
Storage Temperature T
stg
−55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 mA)
V
(BR)
70 − −
Vdc
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
I
R
−
−
−
−
−
−
2.5
30
50
mAdc
Capacitance (between I/O pins)
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 0.8 1.5
pF
Capacitance (between I/O pin and ground)
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 1.6 3
pF
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
−
−
−
−
715
855
1000
1250
mV
dc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Include SZ-prefix devices where applicable.
NUP4301MR6, SZNUP4301MR6
http://onsemi.com
3
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
1.75
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Capacitance
T
A
= -40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
Curves Applicable to Each Cathode
P1-P3P4-P4

SZNUP4301MR6T1G

Mfr. #:
Buy SZNUP4301MR6T1G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors MI TSOP6 LO CAP DIODE ARR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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