2002-2012 Microchip Technology Inc. DS21419D-page 1
TC4420/TC4429
Features
Latch-Up Protected: Will Withstand >1.5A
Reverse Output Current
Logic Input Will Withstand Negative Swing Up To
5V
ESD Protected: 4 kV
Matched Rise and Fall Times:
- 25 ns (2500 pF load)
High Peak Output Current: 6A
Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
High Capacitive Load Drive Capability: 10,000 pF
Short Delay Time: 55 ns (typ.)
CMOS/TTL Compatible Input
Low Supply Current With Logic ‘1’ Input:
-450µA (typ.)
Low Output Impedance: 2.5
Output Voltage Swing to Within 25 mV of Ground
or V
DD
Space-Saving 8-Pin SOIC and 8-Pin 6x5 DFN
Packages
Applications
Switch-Mode Power Supplies
Motor Controls
Pulse Transformer Driver
Class D Switching Amplifiers
General Description
The TC4420/TC4429 are 6A (peak), single-output
MOSFET drivers. The TC4429 is an inverting driver
(pin-compatible with the TC429), while the TC4420 is a
non-inverting driver. These drivers are fabricated in
CMOS for lower power and more efficient operation
versus bipolar drivers.
Both devices have TTL/CMOS compatible inputs that
can be driven as high as V
DD
+ 0.3V or as low as –5V
without upset or damage to the device. This eliminates
the need for external level-shifting circuitry and its
associated cost and size. The output swing is rail-to-rail,
ensuring better drive voltage margin, especially during
power-up/power-down sequencing. Propagational
delay time is only 55 ns (typ.) and the output rise and fall
times are only 25 ns (typ.) into 2500 pF across the
usable power supply range.
Unlike other drivers, the TC4420/TC4429 are virtually
latch-up proof. They replace three or more discrete
components, saving PCB area, parts and improving
overall system reliability.
Package Types
(1)
5-Pin TO-220
V
DD
GND
INPUT
GND
OUTPUT
TC4420
TC4429
Tab is
Common
to V
DD
8-Pin CERDIP/
1
2
3
4
V
DD
5
6
7
8
OUTPUT
GND
V
DD
INPUT
NC
GND
OUTPUT
TC4420
TC4429
TC4420 TC4429
V
DD
OUTPUT
GND
OUTPUT
PDIP/SOIC
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
8-Pin DFN
(2)
V
DD
INPUT
NC
GND
2
3
4
5
6
7
8
1
TC4420
TC4429
V
DD
OUTPUT
GND
OUTPUT
TC4420 TC4429
V
DD
OUTPUT
GND
OUTPUT
6A High-Speed MOSFET Drivers
TC4420/TC4429
DS21419D-page 2 2002-2012 Microchip Technology Inc.
Functional Block Diagram
Effective
Input
TC4420
Output
Input
GND
V
DD
300 mV
4.7V
C = 38 pF
TC4429
500 µA
Non-Inverting
Inverting
2002-2012 Microchip Technology Inc. DS21419D-page 3
TC4420/TC4429
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage .....................................................+20V
Input Voltage ..................................– 5V to V
DD
+ 0.3V
Input Current (V
IN
> V
DD
)...................................50 mA
Power Dissipation (T
A
70°C)
5-Pin TO-220....................................................1.6W
CERDIP.......................................................800 mW
DFN............................................ ...................Note 2
PDIP............................................................730 mW
SOIC............................................................470 mW
Package Power Dissipation (T
A
25°C)
5-Pin TO-220 (With Heatsink) ........................12.5W
Thermal Impedances (To Case)
5-Pin TO-220 R
J-C
......................................10°C/W
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T
A
= +25°C with 4.5V V
DD
18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input
Voltage
V
IH
2.4 1.8 V
Logic ‘0’, Low Input Voltage V
IL
—1.30.8V
Input Voltage Range V
IN
–5 V
DD
+0.3 V
Input Current I
IN
–10 +10 µA 0VV
IN
V
DD
Output
High Output Voltage V
OH
V
DD
– 0.025 V DC TEST
Low Output Voltage V
OL
0.025 V DC TEST
Output Resistance, High R
OH
—2.12.8 I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low R
OL
—1.52.5 I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current I
PK
—6.0AV
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
> 1.5 A Duty cycle2%, t 300 µsec
Switching Time (Note 1)
Rise Time t
R
—2535nsFigure 4-1, C
L
= 2,500 pF
Fall Time t
F
—2535nsFigure 4-1, C
L
= 2,500 pF
Delay Time t
D1
—5575nsFigure 4-1
Delay Time t
D2
—5575nsFigure 4-1
Power Supply
Power Supply Current I
S
0.45
55
1.5
150
mA
µA
V
IN
= 3V
V
IN
= 0V
Operating Input Voltage V
DD
4.5 18 V
Note 1: Switching times ensured by design.
2: Package power dissipation is dependent on the copper pad area on the PCB.

TC4420VOA713

Mfr. #:
Manufacturer:
Microchip Technology
Description:
Gate Drivers 6A Sngl
Lifecycle:
New from this manufacturer.
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