New Product
SS3P5 & SS3P6
Vishay General Semiconductor
Document Number: 88997
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High-Current Density Surface Mount Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power
losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity
protection applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V, 60 V
I
FSM
45 A
E
AS
11.25 mJ
V
F
at I
F
= 3.0 A
0.61 V
T
J
max.
150 °C
DO-220AA (SMP)
eSMP
TM
Series
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS3P5 SS3P6 UNIT
Device marking code 35 36
Maximum repetive peak reverse voltage V
RRM
50 60 V
Maximum average forward rectified current (Fig. 1) I
F(AV)
3.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
45 A
Non-repetitive avalanche energy
at I
AS
= 1.5 A, L = 10 mH, T
J
= 25 °C
E
AS
11.25 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/us
Operating junction and storage temperature range T
J,
T
STG
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward voltage
(1)
I
F
= 3 A
T
J
= 25 °C
T
J
= 125 °C
V
F
0.71
0.61
0.78
0.65
V
Maximum reverse current at rated V
R
(2)
T
J
= 25 °C
T
J
= 125 °C
I
R
-
2.0
100
10
µA
mA
Typical junction capacitance 4.0 V, 1 MHz C
J
80 pF
