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VS-5EWH06FN-M3

P1-P3P4-P6P7-P7
VS-5EWH06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-Oct-16
1
Document Number: 93245
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 5 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
I
F(AV)
5 A
V
R
600 V
V
F
at I
F
1.2 V
t
rr
(typ.) 18 ns
T
J
max. 175 °C
Diode variation Single die
2, 4
3
Anode
1
N/C
TO-252AA (D-PAK)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 150 °C 5
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 70
Peak repetitive forward current I
FM
T
C
= 150 °C, f = 20 kHz, d = 50 % 10
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 5 A - 1.54 1.85
I
F
= 5 A, T
J
= 150 °C - 1.20 1.40
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 150 °C, V
R
= V
R
rated - - 130
Junction capacitance C
T
V
R
= 600 V - 3.5 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
VS-5EWH06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-Oct-16
2
Document Number: 93245
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 18 25
ns
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 22 -
T
J
= 25 °C
I
F
= 5 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-25-
T
J
= 125 °C - 35 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.9 -
A
T
J
= 125 °C - 5.1 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 51 -
nC
T
J
= 125 °C - 93 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
--3°C/W
Approximate weight
0.3 g
0.01 oz.
Marking device Case style TO-252AA (D-PAK) 5EWH06FN
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.5 1.0 1.5 2.0 3.02.5
0.1
1
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
0 100 200 300 500400 600
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-5EWH06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-Oct-16
3
Document Number: 93245
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 100 200 400 500300 600
1
100
10
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
642
8
0
150
170
180
110
130
140
160
120
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
642
8
0
8
10
12
0
4
6
2
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
P1-P3P4-P6P7-P7

VS-5EWH06FN-M3

Mfr. #:
Buy VS-5EWH06FN-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 5A 600V 18ns Hyperfast
Lifecycle:
New from this manufacturer.
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