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BAS40-06,235

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
BAS40_1PSXXSB4X_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 9 — 18 March 2015 6 of 22
NXP Semiconductors
BAS40 series; 1PSxxSB4x series
General-purpose Schottky diodes
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] T
j
=25C prior to surge.
Table 5. Marking codes
Type number Marking code
[1]
Type number Marking code
[1]
1PS70SB40 6*3 1PS75SB45 45
1PS76SB40 S4 BAS40-05 45*
1PS79SB40 T BAS40-05W 65*
BAS40 43* 1PS70SB46 6*6
BAS40H AJ BAS40-06 46*
BAS40L S6 BAS40-06W 66*
BAS40W 63* BAS40-07 47*
1PS70SB44 6*4 BAS40-07V 67
BAS40-04 44* BAS40-05V 65
BAS40-04W 64* 1PS88SB48 8*5
1PS70SB45 6*5 BAS40XY 40*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
reverse voltage - 40 V
I
F
forward current - 120 mA
I
FRM
repetitive peak forward
current
t
p
1s; 0.5 - 120 mA
I
FSM
non-repetitive peak forward
current
t
p
10 ms
[1]
-200mA
T
j
junction temperature - 150 C
T
amb
ambient temperature 65 +150 C
T
stg
storage temperature 65 +150 C
BAS40_1PSXXSB4X_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 9 — 18 March 2015 7 of 22
NXP Semiconductors
BAS40 series; 1PSxxSB4x series
General-purpose Schottky diodes
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point at pins 2, 3, 5 and 6.
7. Characteristics
[1] Pulse test: t
p
300 s; 0.02.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT23 - - 500 K/W
SOT143B - - 500 K/W
SOT363 (1PS88SB48) - - 416 K/W
SOT416 - - 833 K/W
SOT666 (BAS40-05V)
[2]
--225K/W
SOT666 (BAS40-07V)
[2]
--416K/W
SOD123F
[2]
--330K/W
SOD323 - - 450 K/W
SOD523
[2]
--450K/W
SOD882
[2]
--500K/W
SOT323 - - 625 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
SOT363 (BAS40XY)
[3]
--260K/W
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage
[1]
I
F
= 1 mA - - 380 mV
I
F
= 10 mA - - 500 mV
I
F
=40mA - - 1 V
I
R
reverse current V
R
=30V - - 1 A
V
R
=40V - - 10 A
C
d
diode capacitance V
R
=0V; f=1MHz - - 5 pF
BAS40_1PSXXSB4X_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 9 — 18 March 2015 8 of 22
NXP Semiconductors
BAS40 series; 1PSxxSB4x series
General-purpose Schottky diodes
(1) T
amb
= 125 C
(2) T
amb
=85C
(3) T
amb
=25C
(4) T
amb
= 40 C
(1) T
amb
= 125 C
(2) T
amb
=85C
(3) T
amb
=25C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
f=10kHz T
amb
=25C; f = 1 MHz
Fig 3. Differential resistance as a function of forward
current; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
10
2
10
−1
10
−2
10
1
0
mlc361
0.6 0.80.40.2 1
V
F
(V)
I
F
(mA)
(1) (2) (3) (4)
10
3
10
2
10
−1
10
−2
10
1
0
mlc362
2010 4030
V
R
(V)
I
R
(μA)
(1)
(2)
(3)
mlc364
1
10
3
10
−1
10
2
110
10
2
10
r
dif
(Ω)
I
F
(mA)
01020 4030
5
0
4
mlc363
3
2
1
V
R
(V)
C
d
(pF)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

BAS40-06,235

Mfr. #:
Buy BAS40-06,235
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers DIODE SCHTKY TAPE-11
Lifecycle:
New from this manufacturer.
Delivery:
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