IRLML2244TRPBF Datasheet IRLML2244TRPBF | P1-P3

1/24/11

IRLML2244TRPbF

HEXFET

®

Power MOSFET

PD - 97631

www.irf.com 1

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes  through

 are on page 10

Micro3

TM

(SOT-23)

IRLML2244TRPbF

Features and Benefits

Features

Benefits

S

G

1

2

D3

Application(s)

• System/Load Switch

Low R

DS(on)

( ≤ 54mΩ)

Lower switching losses

Industry-standard pinout Multi-vendor compatibility

Compatible with existing Surface Mount Techniques results in Easier manufacturing

RoHS compliant containing no lead, no bromide and no halogen ⇒

Environmentally friendly

MSL1, Consumer qualification Increased reliability

V

DS

-20 V

V

GS Max

± 12 V

R

DS(on) max

(@V

GS

= -4.5V)

54

m

Ω

R

DS(on) max

(@V

GS

= -2.5V)

95

m

Ω

Absolute Maximum Ratings

Symbol Parameter Units

V

DS

Drain-Source Voltage

V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ -4.5V

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ -4.5V

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Maximum Power Dissipation

P

D

@T

A

= 70°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

T

J,

T

STG

Junction and Storage Temperature Range °C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJA

Junction-to-Ambient

––– 100

R

θJA

Junction-to-Ambient (t<10s)

––– 99

Max.

-4.3

-3.4

-55 to + 150

± 12

0.01

-20

1.3

0.8

-18

W

°C/W

A

IRLML2244TRPbF

2 www.irf.com

G

D

S

Electric Characteristics @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage -20 ––– ––– V

Δ

V

(BR)DSS

/

Δ

T

J

Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C

––– 42 54

––– 71 95

V

GS(th)

Gate Threshold Voltage -0.4 ––– -1.1 V

I

DSS

––– ––– 1

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– -100

Gate-to-Source Reverse Leakage ––– ––– 100

R

G

Internal Gate Resistance ––– 8.9 –––

Ω

gfs Forward Transconductance 6.5 ––– ––– S

Q

g

Total Gate Charge ––– 6.9 –––

Q

gs

Gate-to-Source Charge ––– 1.0 –––

Q

gd

Gate-to-Drain ("Miller") Charge ––– 2.9 –––

t

d(on)

Turn-On Delay Time ––– 7.0 –––

t

r

Rise Time ––– 12 –––

t

d(off)

Turn-Off Delay Time ––– 34 –––

t

f

Fall Time ––– 25 –––

C

iss

Input Capacitance ––– 570 –––

C

oss

Output Capacitance ––– 160 –––

C

rss

Reverse Transfer Capacitance ––– 110 –––

Source - Drain Ratings and Characteristics

Symbol Parameter Min. Typ. Max. Units

I

S

Continuous Source Current

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– -1.2 V

t

rr

Reverse Recovery Time ––– 21 32 ns

Q

rr

Reverse Recovery Charge ––– 9.0 14 nC

––– –––

pF

A

-1.3

-18

V

DD

=-10V

nA

nC

ns

V

DS

= V

GS

, I

D

= -10μA

V

DS

=-16V, V

GS

= 0V

V

DS

= -16V, V

GS

= 0V, T

J

= 125°C

R

DS(on)

V

GS

= -2.5V, I

D

=

-3.4A

Static Drain-to-Source On-Resistance

Drain-to-Source Leakage Current μA

mΩ

Conditions

V

GS

= 0V, I

D

= -250μA

Reference to 25°C, I

D

= -1mA

V

GS

= -4.5V, I

D

= -4.3A

MOSFET symbol

showing the

V

DS

=-10V

Conditions

V

GS

= -4.5V

V

GS

= 0V

V

DS

= -16V

ƒ = 1.0KHz

R

G

= 6.8

Ω

V

GS

= -4.5V

di/dt = 100A/μs

V

GS

= 12V

V

GS

= -12V

T

J

= 25°C, I

S

= -4.3A, V

GS

= 0V

integral reverse

p-n junction diode.

V

DS

= -10V, I

D

=-4.3A

I

D

= -4.3A

I

D

= -1A

T

J

= 25°C, V

R

= -16V, I

F

=-4.3A

IRLML2244TRPbF

www.irf.com 3

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

0.1 1 10 100

-V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP -10V

-4.5V

-3.0V

-2.5V

-2.3V

-2.0V

-1.8V

BOTTOM -1.5V

≤

60μs PULSE WIDTH

Tj = 25°C

-1.5V

0.1 1 10 100

-V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP -10V

-4.5V

-3.0V

-2.5V

-2.3V

-2.0V

-1.8V

BOTTOM -1.5V

≤60μs PULSE WIDTH

Tj = 150°C

-1.5V

1.0 1.5 2.0 2.5 3.0

-V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

DS

= -15V

≤

60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.9

1.1

1.3

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= -4.3A

V

GS

= -4.5V

IRLML2244TRPBF

IRLML2244TRPBF

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