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2STF2360
P1-P3
P4-P6
P7-P9
P10-P11
Elec
trical
char
acter
isti
cs
2ST
F236
0
4/1
1
DocI
D133
09 Re
v 6
2 Electrical
characteristics
T
CASE
= 25°C
; unless
otherw
ise spe
cifie
d.
T
able 4. Elec
trical ch
aracterist
ics
Symbol
Parameter
T
est condi
tions
Min.
T
yp.
Max.
Unit
I
CBO
Collecto
r cut-of
f current
(I
E
= 0)
V
CB
= - 60 V
-10
0
nA
I
EBO
Emitter c
ut-off
current
(I
C
= 0)
V
EB
= - 6 V
-100
nA
V
BE(on)
Base-emitte
r on volt
age
V
CE
= -
2
V
I
C
= - 100 mA
-63
0
-650
-730
mV
V
CE(sat)
(1)
1.
Pulse test: pulse duration
≤
300 µs
, duty cycle
≤
2 %
Colle
ctor-emitter
saturati
on volta
ge
I
C
= - 2 A
I
B
= - 100 mA
I
C
= - 3 A
_
I
B
= - 150
mA
-200
-300
-320
-500
mV
mV
V
BE(sat)
(1)
Base-em
itter satur
ation
voltage
I
C
= - 2 A
_
I
B
= -100 mA
-0.9
-1.2
V
hFE
(1)
DC current gain
I
C
= - 100 mA
_
V
CE
= - 2 V
I
C
= - 1 A
_
V
CE
= - 2 V
200
160
400
td
tr
ts
tf
Resi
stive loa
d
Delay time
Rise tim
e
S
torage tim
e
Fall tim
e
I
C
= - 3 A
V
CC
= - 10 V
I
B(on)
= - I
B(off)
= - 300 m
A
V
BE(off)
= 5 V
10
75
250
35
15
100
350
50
ns
ns
ns
ns
f
T
T
ransition frequen
cy
I
C
= - 0.1 A
__
V
CE
= - 10 V
130
MHz
DocID13309 Rev 6
5/1
1
2STF2360
Electri
cal characte
ristics
11
2.1 T
ypical
characteristi
cs
(curves)
Figure 2. DC current gain (V
CE
= - 2 V)
Fig
ure 3.
DC cu
rren
t gain (
V
CE
= - 5
V)
Figure 4.
Collector
emitter sat
uration v
oltage
Figure 5. Bas
e emitter
saturat
ion voltage
Figure 6. R
esisti
ve load sw
itching on
Figure 7.
Resistive l
oad swit
ching of
f
9
&(VDW
>9@
,F>$@
7
-
&
7
-
&
7
-
&
Elec
trical
char
acter
isti
cs
2ST
F236
0
6/1
1
DocI
D133
09 Re
v 6
2.2 T
est
circuit
s
Figure 9. Res
istive load switching
1.
Fast e
lectronic switch
2.
Non-inductive res
istor
Figure 8. C
apacit
ances
P1-P3
P4-P6
P7-P9
P10-P11
2STF2360
Mfr. #:
Buy 2STF2360
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT Lo Vltg fast switch pnp Pwr transistor
Lifecycle:
New from this manufacturer.
Delivery:
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