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US5U3TR

P1-P3P4-P4
US5U3
Transistors
Rev.B 1/3
2.5V Drive
Nch+SBD
MOSFET
US5U3
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low V
F schottky barrier diode.
zApplications
Switching
zPackage specifications zInner circuit
Package
Code
Taping
Basic ordering unit (pieces)
US5U3
TR
3000
Type
zAbsolute maximum ratings (Ta=25°C)
∗1
∗1
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
Limits Unit
Drain-source voltage
<MOSFET>
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Source current
(Body diode)
30
12
±1.5
±6.0
0.6
6.0
∗2
P
D
°CTch
Power dissipation
Channel temperature
150
W / ELEMENT0.7
∗2
∗1
Parameter
VV
RM
Symbol
VV
R
A
I
F
A
I
FSM
Tj
Limits Unit
Repetitive peak reverse voltage
<Di>
Reverse voltage
Forward current
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Forward current surge peak
Power dissipation
Junction temperature
25
20
0.7
3.0
W / ELEMENT
P
D
0.5
150
°C
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
∗1 ESD protection diode
∗2 Body diode
∗2
∗1
(1) (2)
(5)
(3)
(4)
TUMT5
Abbreviated symbol : U03
2.0
1.3
0.2Max.
US5U3
Transistors
Rev.B 2/3
∗1
Parameter Symbol
W / TOTALP
D
°CTstg
Limits Unit
<MOSFET and Di>
Total power dissipation
Range of storage temperature
∗1 Mounted on a ceramic board
−55 to +150
1.0
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
tr
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
<MOSFET>
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
− 10 µAV
GS
=12V, V
DS
=0V
V
DD
15V, V
GS
=
4.5V
30 −−VI
D
= 1mA, V
GS
=0V
−−1 µAV
DS
= 30V, V
GS
=0V
0.5 − 1.5 V V
DS
= 10V, I
D
= 1mA
− 170 240 I
D
= 1.5A, V
GS
= 4.5V
− 180 250 mΩ
mΩ
mΩ
I
D
= 1.5A, V
GS
= 4V
− 240 340 I
D
= 1.5A, V
GS
= 2.5V
1.5 −−SV
DS
= 10V, I
D
= 1.5A
− 80 − pF V
DS
= 10V
− 14
12
− pF V
GS
=0V
−
7
− pF f=1MHz
−
9
− ns
−
15
− ns
−
6
− ns
−
1.6
− ns
−
0.5
2.2 nC
−
0.3
− nC I
D
=
1.5A
−−nC R
L
=
10Ω, R
G
=
10Ω
V
DD
15V
ID= 0.75A
V
GS= 4.5V
R
L= 20Ω
R
G=10Ω
V
SD
−−1.2 V I
S
= 0.6A, V
GS
=0VForward voltage
<Body diode characteristics (Souce-drain)>
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
V
F
−−
0.49 V
I
F
= 0.7A
Forward voltage
I
R
−−
200
µA
V
R
= 20V
Reverse current
<Di>
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
US5U3
Transistors
Rev.B 3/3
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.01
1
10
100
1000
0.1 1 10 100
CAPACITANCE : C (pF)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
Coss
Crss
TOTAL GATE CHARGE : Qg (nC)
0
0
1
2
3
4
5
6
10.5 1.5 2
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.3 Dynamic Input Characteristics
Ta=25°C
V
DD=15V
I
D=1.5A
R
G=10Ω
Pulsed
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.0
0.01
0.1
1
10
0.5 1.0 1.5
SOURCE CURRENT : I
S
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
GATE-SOURCE VOLTAGE : V
GS
(V)
0.001
0.01
0.1
1
10
0.0 0.5 1.0 2.01.5 2.5
DRAIN CURRENT : I
D
(A)
Fig.4 Typical Transfer Characteristics
V
DS
=10V
Pulsed
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : I
D
(A)
0.01
1
10
100
1000
0.1 1 10
SWITCHING TIME : t (ns)
Fig.2 Switching Characteristics
Ta=25°C
V
DD
=15V
V
GS
=4.5V
R
G
=10Ω
Pulsed
tf
td(off)
td(on)
tr
GATE-SOURCE VOLTAGE : V
GS
(V)
0
0
0.1
0.7
0.8
0.9
0.6
0.2
0.3
0.4
0.5
1.0
123 10456789
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(Ω)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate source Voltage
Ta=25°C
Pulsed
I
D
=1.5A
I
D
=
0.75A
zElectrical characteristics curves
DRAIN CURRENT : I
D
(A)
0.01
0.1
0.1
10
1
110
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
V
GS
=4.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : I
D
(A)
0.01
0.1
0.1
10
1
110
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
V
GS
=4.0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : I
D
(A)
0.01
0.1
0.1
10
1
110
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
V
GS
=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
P1-P3P4-P4

US5U3TR

Mfr. #:
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Manufacturer:
Description:
MOSFET 2.5V Drive N-Chan + Sch Barrier Diode
Lifecycle:
New from this manufacturer.
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