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SI2316DS-T1-E3

P1-P3P4-P6P7-P8
Vishay Siliconix
Si2316DS
Document Number: 71798
S-80642-Rev. C, 24-Mar-08
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free Option Available
• TrenchFET
®
Power MOSFET
APPLICATIONS
• Battery Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.050 at V
GS
= 10 V
3.4
0.085 at V
GS
= 4.5 V
2.6
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2316DS (C6)*
* Marking Code
Ordering Information: Si2316DS-T1
Si2316DS-T1-E3 (Lead (Pb)-free)
Si2316DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a, b
T
A
= 25 °C
I
D
3.4 2.9
A
T
A
= 70 °C
2.7 2.3
Pulsed Drain Current
b
I
DM
16
Continuous Source Current (Diode Conduction)
a, b
I
S
0.8
Power Dissipation
a, b
T
A
= 25 °C
P
D
0.96 0.7
W
T
A
= 70 °C
0.6 0.45
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
100 130
°C/W
Steady State 140 175
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
60 75
Available
Pb-free
RoHS*
COMPLIANT
www.vishay.com
2
Document Number: 71798
S-80642-Rev. C, 24-Mar-08
Vishay Siliconix
Si2316DS
Notes:
a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.8
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
0.5
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
≥ 4.5 V, V
GS
= 10 V
6
A
V
DS
≥ 4.5 V, V
GS
= 4.5 V
4
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 3.4 A
0.042 0.050
Ω
V
GS
= 4.5 V, I
D
= 2.6 A
0.068 0.085
Forward Transconductance
a
g
fs
V
DS
= 4.5 V, I
D
= 3.4 A
6.0 S
Diode Forward Voltage
V
SD
I
S
= 0.8 A, V
GS
= 0 V
0.8 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 3.4 A
4.3 7
nCGate-Source Charge
Q
gs
0.65
Gate-Drain Charge
Q
gd
1.2
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
215
pFOutput Capacitance
C
oss
90
Reverse Transfer Capacitance
C
rss
55
Switching
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1.0 A, V
GEN
= 10 V, R
G
= 6 Ω
915
ns
Rise Time
t
r
915
Turn-Off Delay Time
t
d(off)
14 20
Fall Time
t
f
612
Output Characteristics
0
2
4
6
8
10
12
14
16
0246810
V
GS
= 10 thru 5 V
4 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
2 V
Transfer Characteristics
0
2
4
6
8
10
12
14
16
012345
T
C
= 125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
- 55 °C
Document Number: 71798
S-80642-Rev. C, 24-Mar-08
www.vishay.com
3
Vishay Siliconix
Si2316DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.0
0.1
0.2
0.3
0.4
0.5
0 2 4 6 8 10121416
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
012345
V
DS
= 15 V
I
D
= 3.4 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
30
1
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
T
J
= 25 °C
10
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
50
100
150
200
250
300
350
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C
oss
C
iss
C - Capacitance (pF)
C
rss
0.0
0.5
1.0
1.5
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 3.4 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance R
DS(on)
0.0
0.1
0.2
0.3
0.4
0.5
0246810
I
D
= 3.4 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
P1-P3P4-P6P7-P8

SI2316DS-T1-E3

Mfr. #:
Buy SI2316DS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 3.4A 0.96W 50mohm @ 10V
Lifecycle:
New from this manufacturer.
Delivery:
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