IRF1010ES/IRF1010EL
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 50A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 73 110 ns T
J
= 25°C, I
F
= 50A
Q
rr
Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
84
330
A
Notes:
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– VV
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 12 mΩ V
GS
= 10V, I
D
= 50A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 69 ––– ––– SV
DS
= 25V, I
D
= 50A
––– ––– 25
µA
V
DS
= 60V, V
GS
= 0V
––– ––– 250 V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 130 I
D
= 50A
Q
gs
Gate-to-Source Charge ––– ––– 28 nC V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 44 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 12 ––– V
DD
= 30V
t
r
Rise Time ––– 78 ––– I
D
= 50A
t
d(off)
Turn-Off Delay Time ––– 48 ––– R
G
= 3.6Ω
t
f
Fall Time ––– 53 ––– V
GS
= 10V, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 3210 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 690 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy ––– 1180320 mJ I
AS
= 50A, L = 260µH
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 260µH
R
G
= 25Ω, I
AS
= 50A, V
GS
=10V
(See Figure 12)
I
SD
≤ 50A, di/dt ≤ 230A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
