MCR100 Series
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2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Notes 1 and 2)
(T
J
= *40 to 110°C, Sine Wave, 50 to 60 Hz; R
GK
= 1 kW)
MCR100−3
MCR100−4
MCR100−6
MCR100−8
V
DRM,
V
RRM
100
200
400
600
V
On-State RMS Current, (T
C
= 80°C) 180° Conduction Angles I
T(RMS)
0.8 A
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T
J
= 25°C) I
TSM
10 A
Circuit Fusing Consideration, (t = 8.3 ms) I
2
t 0.415 A
2
s
Forward Peak Gate Power, (T
A
= 25°C, Pulse Width v 1.0 ms)
P
GM
0.1 W
Forward Average Gate Power, (T
A
= 25°C, t = 8.3 ms) P
G(AV)
0.01 W
Forward Peak Gate Current, (T
A
= 25°C, Pulse Width v 1.0 ms)
I
GM
1.0 A
Reverse Peak Gate Voltage, (T
A
= 25°C, Pulse Width v 1.0 ms)
V
GRM
5.0 V
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
T
J
−40 to 110 °C
Storage Temperature Range T
stg
−40 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
R
q
JC
R
q
JA
75
200
°C/W
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
T
C
= 25°C
(V
D
= Rated V
DRM
and V
RRM
; R
GK
= 1 kW)T
C
= 110°C
I
DRM
, I
RRM
−
−
−
−
10
100
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage
*
(I
TM
= 1.0 A Peak @ T
A
= 25°C)
V
TM
− − 1.7 V
Gate Trigger Current (Note 4) T
C
= 25°C
(V
AK
= 7.0 Vdc, R
L
= 100 W)
I
GT
− 40 200
mA
Holding Current (Note 3) T
C
= 25°C
(V
AK
= 7.0 Vdc, Initiating Current = 20 mA, R
GK
= 1 kW)T
C
= −40°C
I
H
−
−
0.5
−
5.0
10
mA
Latch Current (Note 4) T
C
= 25°C
(V
AK
= 7.0 V, Ig = 200 mA) T
C
= −40°C
I
L
−
−
0.6
−
10
15
mA
Gate Trigger Voltage (Note 4) T
C
= 25°C
(V
AK
= 7.0 Vdc, R
L
= 100 W)T
C
= −40°C
V
GT
−
−
0.62
−
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, R
GK
= 1 kW,T
J
= 110°C)
dV/dt 20 35 −
V/ms
Critical Rate of Rise of On−State Current
(I
PK
= 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
di/dt − − 50
A/ms
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
3. R
GK
= 1000 W included in measurement.
4. Does not include R
GK
in measurement.
