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BAR18FILM

P1-P3P4-P4
1/4
®
BAR 18
BAS70-04 06
SMALL SIGNAL SCHOTTKY DIODES
December 2001 - Ed: 3A
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
70 V
I
F
Continuous forward current
70 mA
P
tot
Power dissipation (note 1) Tamb = 25°C
250 mW
T
stg
Maximum storage temperature range
- 65 to +150 °C
Tj
Maximum operating junction temperature *
150
°C
T
L
Maximum temperature for soldering during 10s
260
°C
Note 1: for double diodes, Ptot is the total dissipation of both diodes
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient (*)
500 °C/W
(*) Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE
SOT-23
(Plastic)
K
N.C.
A
BAR18
A
K1
K2
BAS70-06
K
A1
A2
BAS70-05
A1
K2
K1
A2
BAS70-04
* :
dPtot
dTj Rth j a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
Low turn-on and high breakdown voltage diodes in-
tended for ultrafast switching and UHF detectors in
hybrid micro circuits.
DESCRIPTION
BAR 18 / BAS70-04 06
2/4
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
Tj = 25°C I
R
= 10µA
70 V
V
F
*
Tj = 25°C I
F
= 1mA
410 mV
I
R
**
Tj = 25°C V
R
= 50V
200 nA
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
Tj = 25°C V
R
= 0V F = 1MHz
2pF
τ*
Tj = 25°C I
F
= 5mA Krakauer Method
100 ps
DYNAMIC CHARACTERISTICS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0E+0
2.0E-3
4.0E-3
6.0E-3
8.0E-3
1.0E-2
1.2E-2
1.4E-2
1.6E-2
1.8E-2
2.0E-2
VFM(V)
IFM(A)
Tj=100°C
Typical values
Tj=25°C
Maximum values
Tj=25°C
Typical values
Fig. 1-1: Forward voltage drop versus forward
current (low level).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1E-4
1E-3
1E-2
7E-2
VFM(V)
IFM(A)
Tj=100°C
Typical values
Tj=25°C
Maximum values
Tj=25°C
Typical values
Fig. 1-2: Forward voltage drop versus forward
current (high level).
* Effective carrier life time.
Pulse test: * tp = 380µs, δ < 2%
** tp = 5 ms, δ < 2%
BAR 18 / BAS70-04 06
3/4
1 10 100
0.1
1.0
2.0
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 4: Junction capacitance versus reverse voltage
applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
0.01
0.10
1.00
tp(s)
Zth(j-a)/Rth(j-a)
T
δ
=tp/T
tp
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm).
0 5 10 15 20 25 30 35 40 45 50
150
200
250
300
350
S(Cu) (mm²)
Rth(j-a) (°C/W)
P=0.25W
Fig. 6: Thermal resistance junction to ambient ver-
sus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35µm).
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
1E-3
1E-2
1E-1
1E+0
1E+1
VR(V)
IR(µA)
Tj=25°C
Tj=100°C
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
0 25 50 75 100 125 150
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Tj(°C)
IR(µA)
VR=70V
Fig. 3: Reverse leakage current versus junction
temperature (typical values)
P1-P3P4-P4

BAR18FILM

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Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 70mA 70 Volt
Lifecycle:
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