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DMN3042L-13

P1-P3P4-P6
DMN3042L
Document number: DS37539 Rev. 2- 2
1 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DM
N3042
L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max I
D
max
30V
26.5mΩ @ V
GS
= 10V
5.8A
32mΩ @ V
GS
= 4.5V
5.0A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
• Battery Charging
• Power Management Functions
• DC-DC Converters
• Portable Power Adaptors
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Weight: 0.008 grams (Approximate)
SOT23
Ordering Information
(Note 4)
Part Number
Packaging
DMN3042L-7 SOT23 3,000/Tape & Reel
DMN3042L-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT23
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W X Y Z A B C
Month
Jan
Feb
Mar
Apr
May
Jun
Ju
l
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Top View
Internal Schematic
Top View
D
G
S
4L = Product Type Marking Code
YM = Date Code Marking
Y or Y̅ = Year (ex: B = 2014)
M = Month (ex: 9 = September)
D
S
G
4L
YM
DMN3042L
Document number: DS37539 Rev. 2- 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DM
N3042
L
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.8
4.0
A
Maximum Body Diode Forward Current (Note 6)
I
S
1.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
30 A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
0.72 W
Thermal Resistance, Junction to Ambient (Note 5) Steady State
R
θ
JA
171 °C/W
Power Dissipation (Note 6)
P
D
1.4 W
Thermal Resistance, Junction to Ambient (Note 6) Steady State
R
θ
JA
93 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note
7
)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1 µA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100
nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note
7
)
Gate Threshold Voltage
V
GS(th)
0.6
1.4 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
21 26.5
mΩ
V
GS
= 10V, I
D
= 5.8A
23 32
V
GS
= 4.5V, I
D
= 5.0A
29 48
V
GS
= 2.5V, I
D
= 4.0A
Diode Forward Voltage
V
SD
0.7 1.2 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note
8
)
Input Capacitance
C
iss
570 860
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
63 95
Reverse Transfer Capacitance
C
rss
53 80
Gate Resistance
R
G
3.2 4.5 Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V) Q
g
13.3 20
nC
V
DS
= 15V, I
D
= 6.9A
Total Gate Charge (V
GS
= 4.5V) Q
g
6.1 8
Gate-Source Charge
Q
gs
1.0 1.5
Gate-Drain Charge
Q
gd
1.6 2.5
Turn-On Delay Time
t
D(on)
1.5 2.4
nS
V
GS
= 10V, V
DD
= 15V, R
G
= 3Ω,
I
D
= 6.9A
Turn-On Rise Time
t
r
3.3 5
Turn-Off Delay Time
t
D(off)
13.9 22
Turn-Off Fall Time
t
f
4.9 7
Body Diode Reverse Recovery Time
t
rr
7.8 12 nS
I
S
= 5A, dI/dt = 100A/µs
Body Diode Reverse Recovery Charge
Q
rr
1.9 3 nC
I
S
= 5A, dI/dt = 100A/µs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN3042L
Document number: DS37539 Rev. 2- 2
3 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DM
N3042
L
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = 2.0V
GS
0
5
10
15
20
25
30
0
1 2 3 4 5
V = 2.5V
GS
V = 1.5V
GS
V = 3.0V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 10.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5.0V
DS
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
0.018
0.02
0.022
0.024
0.026
0.028
0 5 10 15 20 25 30
V = 4.5V
GS
V = 10V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
0
0.04
0.08
0.12
0.16
0.2
0 2 4 6 8 10 12
I = 5.8A
D
I = 5.0A
D
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0 2 4 6 8 10 12 14 16 18 20
V = 10V
GS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
DS(ON)
ON-RESIS TANCE (NORMALIZED)
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
V = 2.5V
GS
I = 4.0A
D
V = 10V
GS
I = 5.8A
D
V = 4.5V
GS
I = 5.0A
D
P1-P3P4-P6

DMN3042L-13

Mfr. #:
Buy DMN3042L-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF
Lifecycle:
New from this manufacturer.
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