SQJ486EP-T1_GE3 Datasheet SQJ486EP-T1_GE3 | P1-P3

SQJ486EP

www.vishay.com

Vishay Siliconix

S14-1445-Rev. B, 14-Jul-14

1

Document Number: 62902

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 75 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• AEC-Q101 qualified

d

• 100 % R

g

and UIS tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

e. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

f. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

V

DS

(V)

75

R

DS(on)

(Ω) at V

GS

= 10 V

0.026

R

DS(on)

(Ω) at V

GS

= 4.5 V

0.032

I

D

(A)

30

Configuration Single

PowerPAK

®

SO-8L Single

2

S

3

S

4

G

1

S

D

Bottom View

1

6.15 mm

5.13 mm

Top View

D

G

S

N-Channel MOSFET

ORDERING INFORMATION

Package PowerPAK SO-8L

Lead (Pb)-free and Halogen-free SQJ486EP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

V

DS

75

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current

a

T

C

= 25 °C

I

D

30

A

T

C

= 125 °C

17

Continuous Source Current (Diode Conduction)

a

I

S

50

Pulsed Drain Current

b

I

DM

120

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

13

Single Pulse Avalanche Energy

E

AS

9mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

56

W

T

C

= 125 °C

19

Operating Junction and Storage Temperature Range

T

J

, T

stg

-55 to +175

°C

Soldering Recommendations (Peak Temperature)

e, f

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient

PCB Mount

c

R

thJA

70

°C/W

Junction-to-Case (Drain)

R

thJC

2.7

SQJ486EP

www.vishay.com

Vishay Siliconix

S14-1445-Rev. B, 14-Jul-14

2

Document Number: 62902

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0, I

D

= 250 μA

75 - -

V

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA

1.1 1.6 2.1

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

- - ± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

GS

= 0 V V

DS

= 75 V

--1

μA

V

GS

= 0 V V

DS

= 75 V, T

J

= 125 °C

--50

V

GS

= 0 V V

DS

= 75 V, T

J

= 175 °C

--150

On-State Drain Current

a

I

D(on)

V

GS

= 10 V V

DS

≥ 5 V

30 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 5.9 A

- 0.022 0.026

Ω

V

GS

= 10 V I

D

= 5.9 A, T

J

= 125 °C

- - 0.043

V

GS

= 10 V I

D

= 5.9 A, T

J

= 175 °C

- - 0.056

V

GS

= 4.5 V I

D

= 5.3 A

- 0.026 0.032

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 5.9 A

-75-S

Dynamic

b

Input Capacitance

C

iss

V

GS

= 0 V V

DS

= 37 V, f = 1 MHz

- 1109 1386

pF Output Capacitance

C

oss

- 146 183

Reverse Transfer Capacitance

C

rss

-6379

Total Gate Charge

c

Q

g

V

GS

= 10 V V

DS

= 37 V, I

D

= 8 A

-2234

nC

Gate-Source Charge

c

Q

gs

-2.7-

Gate-Drain Charge

c

Q

gd

-5-

Gate Resistance

R

g

f = 1 MHz 0.45 0.9 1.5 Ω

Turn-On Delay Time

c

t

d(on)

V

DD

= 37 V, R

L

= 30 Ω

I

D

≅ 1 A, V

GEN

= 10 V, R

g

= 1 Ω

-913

ns

Rise Time

c

t

r

-1117

Turn-Off Delay Time

c

t

d(off)

-2131

Fall Time

c

t

f

-1421

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

--120A

Forward Voltage

V

SD

I

F

= 3.9 A, V

GS

= 0

-0.761.2V

SQJ486EP

www.vishay.com

Vishay Siliconix

S14-1445-Rev. B, 14-Jul-14

3

Document Number: 62902

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Transfer Characteristics

Transconductance

Capacitance

0

16

32

48

64

80

0 4 8 12 16 20

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 4 V

V

GS

= 3 V

V

GS

= 10 V thru 5 V

0.0

0.3

0.6

0.9

1.2

1.5

0 1 2 3 4 5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= - 55

°

C

T

C

= 125 °C

0.00

0.02

0.04

0.06

0.08

0.10

0 20 40 60 80 100

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

16

32

48

64

80

0 2 4 6 8 10

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= - 55 °C

T

C

= 125 °C

T

C

= 25 °C

0

10

20

30

40

50

0 4 8 12 16 20

g

fs

- Transconductance (S)

I

D

- Drain Current (A)

T

C

= 125 °C

T

C

= - 55

°

C

T

C

= 25

°

C

0

400

800

1200

1600

2000

0 15 30 45 60 75

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

SQJ486EP-T1_GE3

SQJ486EP-T1_GE3

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