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SIZ918DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
Vishay Siliconix
SiZ918DT
New Product
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
• TrenchFET
®
Power MOSFETs
• 100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Notebook System Power
• POL
• Synchronous Buck Converter
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() (Max.) I
D
(A) Q
g
(Typ.)
Channel-1 30
0.0120 at V
GS
= 10 V
16
a
6.8 nC
0.0145 at V
GS
= 4.5 V
16
a
Channel-2 30
0.0037 at V
GS
= 10 V
28
a
32 nC
0.0045 at V
GS
= 4.5 V
28
a
S
2
G
2
G
1
D
1
D
1
6
7
8
3
2
1
D
1
S
1
/D
2
5 mm
6 mm
D
1
4
5
Pin 1
Ordering Information: SiZ918DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
PowerPAIR
®
6 x 5
Pin 9
D
1
S
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
G
1
S
1
/D
2
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Channel-1 Channel-2 Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
16
a
28
a
A
T
C
= 70 °C
16
a
28
a
T
A
= 25 °C
14.3
b, c
26
a, b, c
T
A
= 70 °C
11.4
b, c
21
a, b, c
Pulsed Drain Current (t = 300 µs)
I
DM
50 110
Continuous Source Drain Diode Current
T
C
= 25 °C
I
S
16
a
28
a
T
A
= 25 °C
3.4
b, c
4.3
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
18 35
Single Pulse Avalanche Energy
E
AS
16 61 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
29 100
W
T
C
= 70 °C
18 64
T
A
= 25 °C
4.2
b, c
5.2
b, c
T
A
= 70 °C
2.7
b, c
3.3
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol
Channel-1 Channel-2
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
b, f
t 10 s R
thJA
24 30 19 24
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
3.4 4.3 1 1.25
www.vishay.com
2
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
Vishay Siliconix
SiZ918DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
Ch-1 30
V
V
GS
= 0 V, I
D
= 250 µA
Ch-2 30
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
Ch-1 33
mV/°C
I
D
= 250 µA
Ch-2 37
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
I
D
= 250 µA
Ch-1 - 5
I
D
= 250 µA
Ch-2 - 7.5
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
Ch-1 1 2.2
V
V
DS
= V
GS
, I
D
= 250 µA
Ch-2 1.2 2.2
Gate Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
Ch-1 ± 100
nA
Ch-2 ± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
Ch-1 1
µA
V
DS
= 30 V, V
GS
= 0 V
Ch-2 1
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
Ch-1 5
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
Ch-2 5
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 10 V
Ch-1 20
A
V
DS
5 V, V
GS
= 10 V
Ch-2 20
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 13.8 A
Ch-1 0.0100 0.0120
V
GS
= 10 V, I
D
= 20 A
Ch-2 0.0030 0.0037
V
GS
= 4.5 V, I
D
= 12.6 A
Ch-1 0.0120 0.0145
V
GS
= 4.5 V, I
D
= 20 A
Ch-2 0.0035 0.0045
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 13.8 A
Ch-1 47
S
V
DS
= 10 V, I
D
= 20 A
Ch-2 116
Dynamic
a
Input Capacitance
C
iss
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1 790
pF
Ch-2 3830
Output Capacitance
C
oss
Ch-1 190
Ch-2 670
Reverse Transfer Capacitance
C
rss
Ch-1 76
Ch-2 315
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 13.8 A
Ch-1 14 21
nC
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
Ch-2 67.3 105
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 13.8 A
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
Ch-1 6.8 11
Ch-2 32 48
Gate-Source Charge
Q
gs
Ch-1 2.6
Ch-2 10.8
Gate-Drain Charge
Q
gd
Ch-1 1.9
Ch-2 9.3
Gate Resistance
R
g
f = 1 MHz
Ch-1 0.4 2 4
Ch-2 0.2 1.1 2.2
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
www.vishay.com
3
Vishay Siliconix
SiZ918DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Dynamic
a
Tu r n - On D e l ay T i m e
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1 15 30
ns
Ch-2 30 60
Rise Time
t
r
Ch-1 12 20
Ch-2 33 65
Turn-Off Delay Time
t
d(off)
Ch-1 20 40
Ch-2 40 80
Fall Time
t
f
Ch-1 10 20
Ch-2 12 25
Tu r n - On D e l a y T i m e
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-1 10 20
Ch-2 15 30
Rise Time
t
r
Ch-1 12 20
Ch-2 22 25
Turn-Off Delay Time
t
d(off)
Ch-1 20 40
Ch-2 40 80
Fall Time
t
f
Ch-1 10 20
Ch-2 10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
Ch-1 16
A
Ch-2 28
Pulse Diode Forward Current
a
I
SM
Ch-1 50
Ch-2 110
Body Diode Voltage
V
SD
I
S
= 10 A, V
GS
= 0 V
Ch-1 0.85 1.2
V
I
S
= 10 A, V
GS
= 0 V
Ch-2 0.8 1.2
Body Diode Reverse Recovery Time
t
rr
Channel-1
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1 20 40
ns
Ch-2 30 60
Body Diode Reverse Recovery Charge
Q
rr
Ch-1 10 20
nC
Ch-2 21 40
Reverse Recovery Fall Time
t
a
Ch-1 11
ns
Ch-2 17
Reverse Recovery Rise Time
t
b
Ch-1 9
Ch-2 13
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ918DT-T1-GE3

Mfr. #:
Buy SIZ918DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Lifecycle:
New from this manufacturer.
Delivery:
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