IPP60R520CPXKSA1

P1-P3 P4-P6 P7-P9 P10-P10

IPP60R520CP

CoolMOS

TM

Power Transistor

Features

• Lowest figure-of-merit R

ON

x Q

g

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1)

for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is designed for:

• Hard switching SMPS topologies

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25 °C

A

T

C

=100 °C

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

Avalanche energy, single pulse

E

AS

I

D

=2.5 A, V

DD

=50 V

166 mJ

Avalanche energy, repetitive t

AR

2),3)

E

AR

I

D

=2.5 A, V

DD

=50 V

Avalanche current, repetitive t

AR

2),3)

I

AR

A

MOSFET dv /dt ruggedness dv /dt

V

DS

=0...480 V

V/ns

Gate source voltage

V

GS

static V

AC (f >1 Hz)

Power dissipation

P

tot

T

C

=25 °C

W

Operating and storage temperature

T

j

, T

stg

°C

Mounting torque M3 and M3.5 screws 60 Ncm

±30

66

-55 ... 150

0.25

2.5

50

±20

Value

6.8

4.3

17

V

DS

@ T

j,max

650 V

R

DS(on),max

@ T

j

= 25°C 0.520

Ω

Q

g,typ

24 nC

Product Summary

PG-TO220

Type Package Marking

IPP60R520CP PG-TO220 6R520P

Rev. 2.

1 page 1 2012-01-09

IPP60R520CP

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous diode forward current

I

S

A

Diode pulse current

2)

I

S,pulse

17

Reverse diode dv /dt

4)

dv /dt 15 V/ns

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

- - 1.9 K/W

R

thJA

leaded - - 62

Soldering temperature,

wavesoldering only allowed at leads

T

sold

1.6 mm (0.063 in.)

from case for 10 s

- - 260 °C

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=250 µA

600 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=0.25 mA

2.5 3 3.5

Zero gate voltage drain current

I

DSS

V

DS

=600 V, V

GS

=0 V,

T

j

=25 °C

--1µA

V

DS

=600 V, V

GS

=0 V,

T

j

=150 °C

-10-

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10 V, I

D

=3.8 A,

T

j

=25 °C

- 0.47 0.52

Ω

V

GS

=10 V, I

D

=3.8 A,

T

j

=150 °C

- 1.3 -

Gate resistance

R

G

f =1 MHz, open drain - 1.3 -

Ω

Value

T

C

=25 °C

3.8

Values

Thermal resistance, junction -

ambient

Rev. 2.1 page 2 2012-01-09

IPP60R520CP

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 630 - pF

Output capacitance

C

oss

-32-

Effective output capacitance, energy

related

5)

C

o(er)

-30-

Effective output capacitance, time

related

6)

C

o(tr)

-77-

Turn-on delay time

t

d(on)

-17-ns

Rise time

t

r

-12-

Turn-off delay time

t

d(off)

-74-

Fall time

t

f

-16-

Gate Charge Characteristics

Gate to source charge

Q

gs

-3-nC

Gate to drain charge

Q

gd

-11-

Gate charge total

Q

g

-2431

Gate plateau voltage

V

plateau

- 4.7 - V

Reverse Diode

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=3.8 A,

T

j

=25 °C

- 0.8 1.2 V

Reverse recovery time

t

rr

- 230 - ns

Reverse recovery charge

Q

rr

- 2.5 - µC

Peak reverse recovery current

I

rrm

-20-A

1)

J-STD20 and JESD22

2)

Pulse width t

p

limited by T

j,max

5)

C

o(er)

is a fixed capacitance that gives the same stored energy as C

oss

while V

DS

is rising from 0 to 80% V

DSS.

V

R

=400 V, I

F

=I

S

,

di

F

/dt =100 A/µs

6)

C

o(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 to 80% V

DSS.

3)

Repetitive avalanche causes additional power losses that can be calculated as P

AV

=E

AR

*f.

4)

I

SD

=I

D

, di/dt≤400A/µs, V

DClink

=400V, V

peak

<V

(BR)DSS

, T

j

<T

jmax

, identical low side and high side switch.

Values

V

GS

=0 V, V

DS

=100 V,

f =1 MHz

V

DD

=400 V,

V

GS

=10 V, I

D

=3.8 A,

R

G

=14.7Ω

V

DD

=400 V, I

D

=3.8 A,

V

GS

=0 to 10 V

V

GS

=0 V, V

DS

=0 V

to 480 V

Rev. 2.1 page 3 2012-01-09

P1-P3 P4-P6 P7-P9 P10-P10

IPP60R520CPXKSA1

Mfr. #:

Buy IPP60R520CPXKSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 650V 6.8A TO-220

Lifecycle:

New from this manufacturer.

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IPP60R520CPXKSA1